Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology

A 60GHz Class-E Power Amplifier in SiGe

“…A trade-off with a relatively low power gain exists. Nevertheless, it is important to mention that other efficient single-stage class-E PAs operating at microwave frequencies have also shown a peak large signal power gain of approximately 1OdB or less [14,15,20].…”

“…A peak PAE of 65% has been measured at 10GHz with a class-E PA in InP DHBT technology designed to deliver 18-22dBm of output power [14]. To the best of the authors' knowledge, the highest frequency class-E PA reported is a GaAs pHEMT design that achieves peak PAE of 42% at 23GHz [15].…”

“…Both of these requirements are difficult to meet as the operating frequency of the amplifier increases and approaches the fT of the employed device. At microwave frequencies, both lumped element [12,13] and transmission line [14,15] implementations have been employed. Quiescent DC bias currents of several mA are employed to procure a fast switching behavior at the expense of a decreased maximum efficiency [13,15].…”

Driving-signal optimization for LDMOS-SOI class E power amplifier efficiency enhancement

“…Most of them use low breakdown voltage high ft/frnax transistors technologies like MESFET [4], HBT [5], HEMT [6]. These technologies are no fully integrable and offer low output power.…”

“…Class E amplifiers working at frequencies of some GHz appear frequently in technical related literature [5] [6]. Most of them use low breakdown voltage high ft/frnax transistors technologies like MESFET [4], HBT [5], HEMT [6].…”