A 60GHz Class-E Power Amplifier in SiGe

Valdes‐Garcia, Alberto; Reynolds, Scott; Pfeiffer, Ullrich R.

doi:10.1109/asscc.2006.357885

Cited by 29 publications

(6 citation statements)

References 21 publications

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“…Fig. 1 presents a survey of SiGe PAs above 17 GHz, the highest peak PAE is 21% at 58 GHz with 11.5 dBm of output power [2]. The PA reported in this paper achieves a peak PAE of 26% at 45 GHz with a saturated output power of 17.5 dBm.…”

Section: Introductionmentioning

confidence: 88%

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A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

Tai

Carley

Ricketts

2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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A Q-band class-B power amplifier implemented in a 0.13 μm SiGe BiCMOS process is presented. At 45 GHz, the PA achieves a 17.5 dBm saturated output power, a 16.6 dB peak power gain, and a 26% peak power-added efficiency (PAE) with a 2.5V supply. A 2-stage, single-ended, inductor matched topology is used. To support envelope modulation transceiver topologies, the output common-emitter stage is optimized for high efficiency under varying supply voltage and maintains a peak PAE of greater than 21% throughout the supply voltage range of 1.3V to 2.5V. The PA occupies a total die area of 0.2 mm 2 .Index Terms -Power amplifier (PA), millimeter-wave (mmW) power amplifier, silicon germanium (SiGe) HBT, class-B, Q-band.

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Section: Introductionmentioning

confidence: 88%

“…If a switch-mode PA topology is adopted, e.g. class-E [2], [7], the collector efficiency at the output stage may improve, but the overall PAE could potentially be degraded due to the reduced gain of the switching output stage and the increased driver stage power consumption.…”

Section: A Power Amplifier Topologymentioning

confidence: 99%

A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

Tai

Carley

Ricketts

2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

show abstract

“…This validates the suitability of our power combining PA topology for operation from relatively low supply voltages. The PA in [32] reaches a peak-PAE of 20.9% using a single-stage class-E design but has 8.6 dB lower output power and 16.4 dB lower power gain. Although 8/16-way combining can ideally provide 3/6 dB higher power than 4-way combining, both the PAs in [29] and [30] realize 2 dB lower saturated power and much lower PAE.…”

Section: B 77/79 Ghz-band Pa Prototypementioning

confidence: 98%

A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS

Zhao

Long

2012

IEEE J. Solid-State Circuits

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A frequency-scalable, three-stage, transformercoupled millimeter-wave power amplifier (PA) is implemented in 130 nm SiGe-BiCMOS. Differential common-base gain stages extend collector-emitter breakdown voltage beyond 3 V, while collector-emitter neutralization increases reverse isolation and stability. Monolithic self-shielded transformers designed for low insertion loss and compact dimensions on-chip include: a 2:4 input power splitter, a 4:1 output balun combiner and inter-stage coupling transformers. The balun combiner and fully-differential splitter are compensated for imbalances caused by parasitic interwinding capacitance, and simulations predict better than 3% uniformity between reflected port-to-port impedances at 60 GHz. Simulated impedance uniformity is within 6% from 55-65 GHz, and insertion loss of the 0.015 mm combiner prototypes at 60 GHz is below 1 dB.The 0.72 mm 60 GHz-band PA realizes a measured peak smallsignal gain higher than 20 dB with over 10 GHz 3 dB bandwidth. Reverse isolation is better than 51 dB from 50-65 GHz and the PA is unconditionally stable. It consumes 353 mW (quiescent) from a 1.8 V supply and the active area is 0.25 mm . Maximum output power and peak power-added efficiency (PAE) are 20.1 dBm and 18% at 62 GHz, respectively. An up-banded 79-87.5 GHz PA is also implemented to verify frequency scalability of the design. The 0.23 mm active area 79 GHz PA prototype produces 18 dBm saturated output power and 9% peak-PAE at 84 GHz from a 2.5 V supply.

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“…In a class E design, the active device is treated as an ideal switch which gives an open circuit during its "off" mode and a perfect short-circuit during its "on" mode. However, with the operating frequency being a significant portion of the device transit frequency , this ideal switching is not possible thus leading to a sub-optimal class E operation [25]. On the other hand, a class rely on har- monic tuned loads to shape the output voltage and current waveforms.…”

Section: B Power Amplifier (Pa)mentioning

confidence: 98%

An Energy Harvesting 2$\times$2 60 GHz Transceiver With Scalable Data Rate of 38–2450 Mb/s for Near-Range Communication

Taghivand¹,

Aggarwal

Rajavi

et al. 2015

IEEE J. Solid-State Circuits

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A fully integrated 2 2 CMOS transceiver at 60 GHz with energy harvesting capability in the transmitter mode and on-chip dipole antennas is demonstrated. The radio supports on-off-keying (OOK) modulation and a programmable data rate of 38 to 2450 Mb/s at a BER of less than 5 10 . The power consumption of the transmitter scales with data rate from 100 W to 6.3 mW at 5 cm range and from 260 W to 11.9 mW at 10 cm range. This yields an energy efficiency of 2.6 pJ/b at 5 cm and 4.9 pJ/b at 10cm. The energy harvesting circuits operate at 2.45 GHz with an average efficiency of 33%. The harvesting antenna and its matching components are off-chip. The complete transceiver including the energy harvesting block and on-chip antennas occupies 1.62 mm in 40 nm CMOS.Index Terms-Close range, dipole antenna, energy harvest, impulse radio, IR-UWB, low power, MIMO, mmWave, near range, on-chip antenna, OOK, power harvest, 60 GHz, 2 2, ultra wide band.

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A 60GHz Class-E Power Amplifier in SiGe

Cited by 29 publications

References 21 publications

A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS

An Energy Harvesting 2$\times$2 60 GHz Transceiver With Scalable Data Rate of 38–2450 Mb/s for Near-Range Communication

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