Switchable conductivity at the ferroelectric interface: Nonpolar oxides

Fredrickson, Kurt D.; Demkov, Alexander A.

doi:10.1103/physrevb.91.115126

Cited by 87 publications

(41 citation statements)

References 80 publications

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“…We find that the effective tunneling barrier width is therefore reduced by about two unit cells with polarization pointing into n-SrTiO 3 . Recent experimental and theoretical studies have also found this kind of interfacial electronic reconstruction in ferroelectric oxides [17][18][19].…”

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confidence: 70%

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

2016

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confidence: 70%

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

2016

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“…This possibility has already been explored from first principles. [13][14][15] In Refs. 13 and 14 it was shown that the 2DEG could be manipulated with the ferroelectric polarization in symmetric KNbO 3 /ATiO 3 (A=Sr, Ba, Pb) heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Model of two-dimensional electron gas formation at ferroelectric interfaces

et al. 2015

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The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here we study under what circumstances a similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first principles simulations of free standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a non-volatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

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“…When the ferroelectric polarization increases, both charge carrier density and magnetic moment at the interface increase and reach ~1.5×10 14 When the polarization of PbTiO 3 is reversed and switched to be oriented from TiO 2 to PbTiO 3 , as shown in Figure 5(a), the ferroelectric polarization of PbTiO 3 drives a charge transfer from the interfacial region. As shown in Figure.5(b), the top of valence bands shifts above Fermi level with some empty states at the IF-TiO 2 layer and two neighboring layers (TiO 2 and PbO layer).…”

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confidence: 99%

Interfacial Multiferroics of TiO₂/PbTiO₃ Heterostructure Driven by Ferroelectric Polarization Discontinuity

Wang¹,

Ren²,

Tian³

et al. 2017

ACS Appl. Mater. Interfaces

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Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO/SrTiO, two-dimensional conductive states form to avoid the polar discontinuity, and magnetic properties are found at such an interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a magnetic state, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial magnetic state. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO and nonferroelectric polarized oxide TiO. We show that charge is transferred to the interfacial layer forming an interfacial ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics.

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Switchable conductivity at the ferroelectric interface: Nonpolar oxides

Cited by 87 publications

References 80 publications

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Model of two-dimensional electron gas formation at ferroelectric interfaces

Interfacial Multiferroics of TiO₂/PbTiO₃ Heterostructure Driven by Ferroelectric Polarization Discontinuity

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Switchable conductivity at the ferroelectric interface: Nonpolar oxides

Cited by 87 publications

References 80 publications

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Model of two-dimensional electron gas formation at ferroelectric interfaces

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

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Interfacial Multiferroics of TiO₂/PbTiO₃ Heterostructure Driven by Ferroelectric Polarization Discontinuity