Swift Xe²⁶⁺Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

Abstract

Here we report the eect of the irradiation by 167 MeV Xe 26+ ions (in the uence range up to 3×10 12 ions/cm 2 ) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO lms deposited by radiofrequency magnetron sputtering.As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO lm.

Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

“…2(b), a strong peak is observed at 3.24 eV with FWHM $0.13 eV corresponding to near band-edge emission (NBE) peak, which is attributed to recombination of free exciton. 31 The presence of a strong and sharp NBE peak and the almost complete absence of broad peak in visible range indicate high optical properties of ZnO NRs and absence or very low density of traps/defects centres. 32 Hydrogen gas sensing properties of nanosensor were measured at two Au Schottky contacts as shown as schematic diagram in Fig.…”