Swift heavy ion-induced modification of Al2O3 and MgO surfaces

On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range

“…2 it can be seen that the second trapping site appears for fluences above 10 13 ion/cm 2 , respectively. For the fluence range of this sample set, if it is assumed that the positron trapping sites (monovacancies) are inside a cylindrical volume around the ion path, the radius of the effective ion region can be estimated.…”

“…Despite the numerous experiments reported there are several questions to be resolved regarding the details of defect formation process induced by the impinging swift ions, specifically near to the surface region where the electronic stopping power is a few orders of magnitude higher than the nuclear stopping power. In this region, far from the end of the penetration depth of the implanted ions, it is expected that each ion produces an independent cylindrical volume full of defects around the ion path [1][2][3]. The aim of this work is to get additional information on the defect production and evolution during and after the highenergy swift heavy ion irradiation process utilizing the high sensitivity of the positron annihilation methods.…”

Surface Nanofeatures Induced by High-Energy Heavy Ions Irradiation

“…Features similar in size were reported as hillocks formed on the surfaces of α-Al 2 O 3 and MgO irradiated with high energy Kr and Bi ions, and have been suspected to form by plastic deformation due to defects created by the Coulomb explosion mechanism in the target subsurface layer [13,14].…”

“…Auciello and Kelly [12] describe pyramid as termed, regular and crystalline feature forming on high sputter yield materials, such as Cu, Au, Ag, Al, and Pb [12]. A more recent report by Skuratov et al [13,14] describes nanofeatures, which were induced by 245-710 MeV Bi and Kr ions, as hillock-like defects.…”

Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review

“…Al2O3 (25 #) (Skuratov et al, 2003) GaSb (28) (Szenes et al, 2002) InSb (28) (Szenes et al, 2002) InAs (28) (Szenes et al, 2002) UO2 (29) (Matzke et al, 2000) …”