Susceptibility of Civilian GPS Receivers to Electromagnetic Radiation

Månsson, Daniel; Thottappillil, Rajeev; Nilsson, Tony; Lunden, O.; Bäckström, Mikael

doi:10.1109/temc.2008.921015

Cited by 50 publications

(11 citation statements)

References 2 publications

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“…Different HPM sources may cause a disruption or destruction of the semiconductor components of the system. [1][2][3][4][5][6][7][8][9][10] At the same time, the higher safety and stability demands of electronic systems require further development of the protection measures against electromagnetic interference. The need for suitable hardening measures has emerged during the past several years, and some attempts have been made to protect the system from these effects.…”

Section: Introductionmentioning

confidence: 99%

Hardening measures for bipolar transistors against microwave-induced damage

Chai¹,

Ma²,

Ren³

et al. 2013

Chinese Phys. B

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In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high-power microwaves. The mechanism is presented by analyzing the variation in the internal distribution of the temperature in the device. The findings show that the device becomes less vulnerable to damage with an increase in bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter, R e , can obviously prolong the burnout time of the device. However, R e will aid damage to the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base R b will weaken the capability of the device to withstand microwave damage.

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Section: Introductionmentioning

confidence: 99%

Hardening measures for bipolar transistors against microwave-induced damage

Chai¹,

Ma²,

Ren³

et al. 2013

Chinese Phys. B

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“…For high-intensity transient electromagnetic pulse, it is often considered that the parameters such as repetition frequency, field intensity and pulse width play an important role in the electromagnetic interference effect on electronic systems [33]- [35]. Whether the shielding performance of materials will be affected by the parameters of high-intensity transient electromagnetic pulse is crucial for their practical applications.…”

Section: Shielding Performance Under the Excitation Of High-intenmentioning

confidence: 99%

Shielding Performance of Materials Under the Excitation of High-Intensity Transient Electromagnetic Pulse

et al. 2021

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Shielding effectiveness (SE) dominates the shielding performance of materials. Under the excitation of high-intensity transient electromagnetic pulse, especially the wide-band transient electromagnetic pulse, how to characterize and calculate the SE of shielding materials is not clear. In order to reveal the shielding performance of materials towards the wide-band transient electromagnetic pulse, a systematic experimental investigation was performed on a home-made SE measurement system. The "peak value reduction (SE PR )" is verified to be an effective approach for the characterization of SE of shielding materials. The SE of the employed materials shows no noticeable change even with the excitation field intensity increasing to 200 kV/m, which is significantly different from that of high-power microwave (HPM). Under the excitation of HPM, the SE of materials starts to increase at a field intensity of 19.4 kV/m and becomes saturated at 33.6 kV/m. Further analysis discloses that the variation of SE of materials is mainly dependent on two factors, one is the intrinsic property of the material itself, and the other is energy density spectrum of the excitation high-intensity transient electromagnetic pulse. The energy in per frequency unit (10 MHz) for wide-band transient electromagnetic pulse is far lower than that of HPM, resulting in an evident dissimilarity in the changes of SEs of shielding materials.INDEX TERMS shielding performance, wide-band transient electromagnetic pulse, peak value reduction, energy density spectrum.

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“…In terms of experimental studies, there are many detailed investigations into the electronics, involving the following equipment/components: computers and computer networks [11], microprocessor boards [12], the microcontroller [13], logic devices [14,15], GPS receivers [16], and so on, which are bene cial to studying the UWB e ects on the millimeter wave detector. e researchers have obtained susceptibility levels of those equipment/components through the tests, and some factors that may affect the results are being investigated.…”

Section: Introductionmentioning

confidence: 99%

A Method for Predicting Coupling Laws of UWB EMP to Millimeter Wave Detector

Chen

Gao

2022

International Journal of Antennas and Propagation

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The millimeter wave detector has been widely applied in short-range detection systems. However, it can be easily disturbed by the ultra-wideband electromagnetic pulse (UWB EMP). In this paper, we proposed a simplified model to investigate the coupling laws of UWB EMP to the millimeter wave detector. With the help of finite integration technology (FIT), the coupling process can be visualized, and the most sensitive pose and the coupling path are analyzed. The irradiation tests are carried out to verify the simulation results. The results show that the shielding effectiveness (SE) of the detector in the vertical state is the worst, and the UWB EMP enters the detector mainly through the circular opening. Under the irradiation of UWB EMP, the detector shows three phenomena: interruptions, constant false alarms, and damage. The interruptions can be recovered by power reset, while the constant false alarms and damage are irreversible effects. The results can be employed to reinforce the electromagnetic compatibility (EMC) of the millimeter wave detector. With the increasing use of short-range detection systems, the EMC of existing products must be improved.

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Susceptibility of Civilian GPS Receivers to Electromagnetic Radiation

Cited by 50 publications

References 2 publications

Hardening measures for bipolar transistors against microwave-induced damage

Hardening measures for bipolar transistors against microwave-induced damage

Shielding Performance of Materials Under the Excitation of High-Intensity Transient Electromagnetic Pulse

A Method for Predicting Coupling Laws of UWB EMP to Millimeter Wave Detector

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