Surfactant effect of oxygen in epitaxial γ-Fe/Cu(001)–O(2×)R45°

Li, L.; Kida, A.; Ohnishi, Masaki; Matsui, Masanao

doi:10.1016/s0039-6028(01)01198-0

Cited by 15 publications

(8 citation statements)

References 22 publications

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“…The result of the surfactant phenomenon of oxygen atoms for γ -Fe layer grown on Cu(001)-O was same to that for the present Co/Cu(001) system as reported already in Ref. 16), where the fcc 45 ML γ -Fe was obtained but the structural transformation to α-Fe took place after the deposition of 55 ML Fe. The RHEED pattern over 45 ML became gradually spotty and the in-plane lattice constant was increasing.…”

Section: Co/cu(001) and γ -Fe/cu(001)supporting

confidence: 88%

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Surfactant Effect of Oxygen Atoms on Epitaxial Growth of fcc Ultra Thin Films on Cu(001)

Onishi

Torii

et al. 2002

Mater. Trans.

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Surface active agent (surfactant) effect of the adsorbed oxygen atoms on epitaxial growth of fcc ultra thin films (Co, γ -Fe, Cr) on Cu(001), a Co/γ -Fe/Co trilayer on Cu(001) and a [Co/Cu] multilayer was investigated. The surfactant effect of oxygen atoms on the growth of fcc Co on Cu(001)-O reconstructed structure of (2 √ 2 × √ 2)R45 • was found by the RHEED observation. The non-equilibrium fcc structure of Fe was stable until 45 ML on the Cu(001)-O surface formed on Cu(001) single crystal, but 20 ML on the Cu(001)-O surface formed on Cu(001) buffer layer deposited on MgO(001). The surfactant effect was not observed for the non-equilibrium fcc Cr. The surfactant effect of oxygen atoms on the Co/γ -Fe/Co trilayer and [Co/Cu] 20 multilayer were observed. The surface reconstruction structure of Cu (001)• is necessary for the oxygen surfactant effect on the epitaxial growths of fcc metals on Cu(001).

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Section: Co/cu(001) and γ -Fe/cu(001)supporting

confidence: 88%

“…16) Before our report, the surfactant effect of the oxygen was reported in the homo-epitaxial growth of Cu on Cu(001), 17) where the 0.5 ML oxygen atoms constitute a reconstruction structure of (2…”

Section: Introductionmentioning

confidence: 80%

Surfactant Effect of Oxygen Atoms on Epitaxial Growth of fcc Ultra Thin Films on Cu(001)

Onishi

Torii

et al. 2002

Mater. Trans.

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“…Oxygen has been shown to encourage layerwise growth in several systems including during the growth of Co/Cu spin valves, 33 cobalt on copper(110), 34 nickel on copper(001), 35 and iron on copper(001), 36 a system where CO is also known to improve the growth. 37 In these cases, the oxygen was shown to float to the top of the growing surface, thus acting as a true surfactant.…”

Section: The Effects Of Oxygen Exposurementioning

confidence: 99%

Growth of ultrathin rare-earth films studied byin situx-ray diffraction

et al. 2004

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We present in-situ x-ray scattering measurements performed during the growth of two rare-earth metals, gadolinium and samarium, onto molybdenum (110) single crystals. The results have been interpreted using a diffusive growth model to determine the degree of interlayer mass transport in the initial stages of deposition. Both elements are shown to grow generally in a layerwise manner but with significant roughness after the initial layer is complete. A raised substrate temperature modifies the growth; the best Gd single layer is produced at a temperature of 140°C when deposited at a rate of 0.067 monolayers/min while for Sm the growth becomes increasingly islanded at higher temperatures. The presence of oxygen at the surface encourages layer-by-layer growth for both Gd and Sm, although a significant proportion of the atoms are in upper layers before the lower ones are complete. The mechanism for improved layerwise growth is oxide formation at the interface, producing a large amount of small islands that encourage interlayer mass transport. The growth of Sm on Mo (110) is generally more rough than Gd on Mo(110) due to the dynamic size change associated with the coordination induced valence transition for the Sm atoms.

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“…Since W is expected to be positive and V negative, one predicts V e < Àm 1 0 and Table 3 Conditions at all possible transitions between phases on square terraces with M ¼ 3 Another example of adsorption on reconstructed Cu(1 0 0) leading to terraces of M ¼ 3 is the ''Surfactant effect of oxygen in epitaxial g-Fe/Cu(0 0 1)- [16]. This experiment shows that oxygen can be used to prepare the surface, which then stabilizes the epitaxial growth of the g-Fe film.…”

Section: Terraces Of Width M ¼mentioning

confidence: 99%