Surfactant Effect of Oxygen Atoms on Epitaxial Growth of fcc Ultra Thin Films on Cu(001)

Onishi, M.; Li, Lin; Torii, Shuki; Kida, A.; Doi, M.; Matsui, Masanao

doi:10.2320/matertrans.43.2143

Cited by 3 publications

(3 citation statements)

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“…The proposed surfactant mechanism for Co on Cu(110) is the formation of various oxygen-induced surface reconstructions that are likely to lower the surface energy of the film. The growth of Cr on Cu(001) was found to be unaffected by oxygen predosing, 38 which the authors suggest as being due to the high reactivity between Cr and oxygen atoms. Here we present results showing how oxygen preadsorption affects the growth of Gd and Sm on Mo(110).…”

Section: The Effects Of Oxygen Exposurementioning

confidence: 99%

Growth of ultrathin rare-earth films studied byin situx-ray diffraction

et al. 2004

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We present in-situ x-ray scattering measurements performed during the growth of two rare-earth metals, gadolinium and samarium, onto molybdenum (110) single crystals. The results have been interpreted using a diffusive growth model to determine the degree of interlayer mass transport in the initial stages of deposition. Both elements are shown to grow generally in a layerwise manner but with significant roughness after the initial layer is complete. A raised substrate temperature modifies the growth; the best Gd single layer is produced at a temperature of 140°C when deposited at a rate of 0.067 monolayers/min while for Sm the growth becomes increasingly islanded at higher temperatures. The presence of oxygen at the surface encourages layer-by-layer growth for both Gd and Sm, although a significant proportion of the atoms are in upper layers before the lower ones are complete. The mechanism for improved layerwise growth is oxide formation at the interface, producing a large amount of small islands that encourage interlayer mass transport. The growth of Sm on Mo (110) is generally more rough than Gd on Mo(110) due to the dynamic size change associated with the coordination induced valence transition for the Sm atoms.

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Section: The Effects Of Oxygen Exposurementioning

confidence: 99%

Growth of ultrathin rare-earth films studied byin situx-ray diffraction

et al. 2004

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“…In both cases, the MR ratio was less than 0.1%. It should be noted that the very small MR ratio was observed only for [Co/Cu] 20 (1 0 0) multilayer, in spite of the almost perfect confirmation of the surfactant effect in OSA-MBE method [10] and no report for the large MR ratio in the multilayer as mentioned before. One of the possible explanations is the strain in the Co layer.…”

Section: Resultsmentioning

confidence: 81%

“…In our work [5], a [Fe/Cr](1 0 0) multilayer prepared by a UHV-MBE method had fairly large MR ratio as 116% at 4.2 K. Recently, investigations about an improvement of interface flatness in multilayer growth using surfactant atoms were reported [6,7]. The surfactant effect of oxygen in the epitaxial growth of -Fe/Cu(1 0 0), Co/-Fe/ Co(1 0 0) and [Co/Cu] 20 (1 0 0) multilayer were investigated in our previous works [8][9][10].…”

Section: Introductionmentioning

confidence: 99%