Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors

Bain, Lauren; Collazo, Ramón; Hsu, Shu-han; Pfiester, Nicole; Manfra, Michael J.; Ivanisevic, Albena

doi:10.1016/j.actbio.2014.02.038

Cited by 24 publications

(26 citation statements)

References 57 publications

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“…Dorsal root ganglion survival and interconnectivity can also be improved by the presence of nanowires; as indicated by the robust neurite outgrowth in Figure a, culture on a sparse array of GaP nanowires offers significant improvements to these parameters over both planar GaP and glass surfaces . Nanowire and nanoroughened surfaces of GaN have been implemented as well; our prior work verified a significant increase in cellular adhesion to GaN nanowires when compared with planar or moderately roughened ( R rms ≈ 10 nm) surfaces, and Figure b demonstrates a change in cellular morphology is observed on said moderately roughened surfaces depending on the orientation of that roughness – unidirectional lines vs. a more random porous structure . Li and Han implemented a photoactivation scheme with a GaN nanowire network to explore cell responses to superhydrophobic vs. superhydrophilic nanowire surfaces .…”

Section: Surface Patterning and Non‐planar Structuresmentioning

confidence: 92%

“…Our recent study on textured GaN featured incubation with a peptide motif derived from the membrane protein laminin . This motif – the IKVAV sequence – is associated with cellular adhesion and neural differentiation, and these effects were clearly observed in the pre‐and post‐treatment phases on all surfaces.…”

Section: Coupling Topography and Chemistrymentioning

confidence: 99%

“…These structures consist of filamentous actin and, through interactions with the material properties of the extracellular environment, dictate how neurons extend and develop with respect to various growth cues . b) Scanning electron micrograph of a neurite with extended filopodia and lamellipodia . c,d) schematics of potential signaling pathways for directing neural restructuring with respect to external growth cues .…”

Section: Cells On Unmodified Semiconductorsmentioning

confidence: 99%

Section: Cells On Unmodified Semiconductorsmentioning

confidence: 99%

Section: Surface Patterning and Non‐planar Structuresmentioning

confidence: 99%

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Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Bain

Ivanisevic

2014

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Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

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Section: Surface Patterning and Non‐planar Structuresmentioning

confidence: 92%

Section: Coupling Topography and Chemistrymentioning

confidence: 99%

Section: Cells On Unmodified Semiconductorsmentioning

confidence: 99%

Section: Cells On Unmodified Semiconductorsmentioning

confidence: 99%

Section: Surface Patterning and Non‐planar Structuresmentioning

confidence: 99%

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Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Bain

Ivanisevic

2014

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Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

Snyder

Kirste

Collazo

et al. 2017

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Wide bandgap semiconductors such as gallium nitride (GaN) exhibit persistent photoconductivity properties. The incorporation of this asset into the fabrication of a unique biointerface is presented. Templates with lithographically defined regions with controlled roughness are generated during the semiconductor growth process. Template surface functional groups are varied using a benchtop surface functionalization procedure. The conductivity of the template is altered by exposure to UV light and the behavior of PC12 cells is mapped under different substrate conductivity. The pattern size and roughness are combined with surface chemistry to change the adhesion of PC12 cells when the GaN is made more conductive after UV light exposure. Furthermore, during neurite outgrowth, surface chemistry and initial conductivity difference are used to facilitate the extension to smoother areas on the GaN surface. These results can be utilized for unique bioelectronics interfaces to probe and control cellular behavior.

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Label-Free Biosensors Based on III-Nitride Semiconductors

Cimalla

2017

Springer Series on Chemical Sensors and Biosensors

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Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors

Cited by 24 publications

References 57 publications

Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

Label-Free Biosensors Based on III-Nitride Semiconductors

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