Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

Hilner, Emelie; Lundgren, Edvin; Mikkelsen, Anders

doi:10.1016/j.susc.2009.11.029

Cited by 24 publications

(28 citation statements)

References 41 publications

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“…3.1. Pristine InAs(1 1 1) surfaces While a (2×2) LEED pattern is observed for InAs(1 1 1)A (figure 1(a)), the InAs(1 1 1)B surface is unreconstructed (not shown); this is due to charge transfer between the outermost layers [30]-which also explains the »250 meV shift towards the high binding energy (BE) side of the main peak of the In4d PES spectrum for the A side with respect to the B side-and/or the presence of In vacancies on the In-terminated A surface (see [31][32][33], and the references therein). The In4d PES spectra for both the A side and the B side of InAs(1 1 1) are in agreement with those reported previously [21,34,35].…”

Section: Resultsmentioning

confidence: 99%

“…Deviation from the linear behaviour at higher coverage suggests that the Bi growth on the B side of InAs(1 1 1) proceeds via a Stranski-Krastanow mode, contrary to what happens on InAs(1 1 1)A. Indeed the STM images show the presence of such islands on InAs(1 1 1)B [33]. The substrate In4d PES signal remains visible up to deposition equivalent to a coverage of~50 BL Bi, above which the Bi three-dimensional islands that build on the surface above 1 BL coalesce.…”

Section: Bi/inas(1 1 1): Growth Modesmentioning

confidence: 90%

See 1 more Smart Citation

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

et al. 2019

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The growth of Bi on both the In-terminated (A) face and the As-terminated (B)face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In4d and Bi 5d 5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulkBi, while more than≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the G point of the Brillouin zone.

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Section: Resultsmentioning

confidence: 99%

Section: Bi/inas(1 1 1): Growth Modesmentioning

confidence: 90%

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

et al. 2019

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“…As shown in Fig. 2, steps are flowing downward relative to the AFM image and step height corresponds to InAs lattice constant height [13]. It should be mentioned that there are a few reports on step-flow growth of InAs on GaAs (0 0 1) which has a lattice mismatch of $ 7% [14].…”

Section: Structural Characterizationmentioning

confidence: 98%

High quality InAs and GaSb thin layers grown on Si (111)

Gorji

Berg

Dick

et al. 2011

Journal of Crystal Growth

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“…Many experiments have explored the surface effect in nanomaterials, including characterizing surface atomic structures in various nanomaterials by using electron diffraction and scanningprobe microscopy [9][10][11][12] and by measuring the size-dependent mechanical properties of nano-sized structural elements [13][14][15][16][17]. The experimental findings provide a convincing demonstration that surface effects play an important role in the mechanical properties of nanomaterials.…”

Section: Introductionmentioning

confidence: 99%

Elastic Theory of Nanomaterials Based on Surface-Energy Density

Chen

Yao

2014

Journal of Applied Mechanics

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Recent investigations into surface-energy density of nanomaterials lead to a ripe chance to propose, within the framework of continuum mechanics, a new theory for nanomaterials based on surface-energy density. In contrast to the previous theories, the linearly elastic constitutive relationship that is usually adopted to describe the surface layer of nanomaterials is not invoked and the surface elastic constants are no longer needed in the new theory. Instead, a surface-induced traction to characterize the surface effect in nanomaterials is derived, which depends only on the Eulerian surface-energy density. By considering sample-size effects, residual surface strain, and external loading, an explicit expression for the Lagrangian surface-energy density is achieved and the relationship between the Eulerian surface-energy density and the Lagrangian surface-energy density yields a conclusion that only two material constants-the bulk surface-energy density and the surface-relaxation parameter-are needed in the new elastic theory. The new theory is further used to characterize the elastic properties of several fcc metallic nanofilms under biaxial tension, and the theoretical results agree very well with existing numerical results. Due to the nonlinear surface effect, nanomaterials may exhibit a nonlinearly elastic property though the inside of nanomaterials or the corresponding bulk one is linearly elastic. Moreover, it is found that externally applied loading should be responsible for the softening of the elastic modulus of a nanofilm. In contrast to the surface elastic constants required by existing theories, the bulk surface-energy density and the surface-relaxation parameter are much easy to obtain, which makes the new theory more convenient for practical applications.

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Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

Cited by 24 publications

References 41 publications

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

High quality InAs and GaSb thin layers grown on Si (111)

Elastic Theory of Nanomaterials Based on Surface-Energy Density

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