Surface structure and composition of β- and 6H-SiC

Kaplan, R.

doi:10.1016/0039-6028(89)90704-8

Cited by 325 publications

(138 citation statements)

References 40 publications

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“…On the other hand, periodic structures are formed by annealing SiC surfaces in ultra high vacuum (UHV), especially by annealing in a Si-rich environment to prevent the surface graphitization. Depending on polytypes, polarity and sample preparation procedures, various surface structures have been reported [3,[5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Observations of Graphitized SiC Surfaces by STM

Hisada

Mitsuoka

Mukainakano

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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Section: Introductionmentioning

confidence: 99%

Observations of Graphitized SiC Surfaces by STM

Hisada

Mitsuoka

Mukainakano

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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“…Scratches are removed by etching with hydrogen, and then the SiC is rapidly heated to the growth temperature, typically between 1473 and 1933 K, for a specific time. During the heating process a Si flux is applied to remove any produced SiO gas and maintain the concentration of Si on the surface [293,296,297]. Alternatively, growth can be performed under an Ar atmosphere.…”

Section: The Growth Processmentioning

confidence: 99%

Growth of epitaxial graphene: Theory and experiment

et al. 2014

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A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of the most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.

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“…Further, the improved crystalline quality and the surface morphology of the GaN layer by the substrates surface cleaning with Ga-metal at high temperature (830 C) has been reported in detail elsewhere [7]. The Ga metal cleaning of the SiC-6H surfaces effectuated the surface oxide desorption through volatilized SiO and Ga 2 O 3 [7,9]. The Ga-adatoms bond to three surface Si atoms eliminates the dangling bonds on the top of the bulk-terminated 6H-SiC [9].…”

Section: Methodsmentioning

confidence: 86%

“…The Ga metal cleaning of the SiC-6H surfaces effectuated the surface oxide desorption through volatilized SiO and Ga 2 O 3 [7,9]. The Ga-adatoms bond to three surface Si atoms eliminates the dangling bonds on the top of the bulk-terminated 6H-SiC [9]. The occurrence of the (3 Â 1) RHEED pattern along (1--100) azimuth, indicative of ffiffi ffi 3 p Â ffiffi ffi 3 p À R30 surface reconstruction upon prolonged thermal cleaning manifest that the surface is ready for the epi-growth.…”

Section: Methodsmentioning

confidence: 99%

Growth of Strain Free GaN Layers on 6H‐SiC (0001) by Plasma‐Assisted Molecular Beam Epitaxy

Jeganathan¹,

Shimizu²,

Okumura³

2002

phys. stat. sol. (c)

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The strain state of the GaN/6H-SiC (0001) heterostructure is shown to depend on the AlN nucleation layer thickness and growth process. Using identical GaN growth conditions with different AlN buffer layer thickness, the GaN layers were found to be under different strain in the plane normal to the growth direction. The accomplishment of double-step AlN buffer (150 nm) grown at two different temperatures with a difference of 30-50 C has lead into strain free growth of 1.2 mm thick GaN layers with improved structural and optical characteristics. The unstrained nature of the GaN layers was found from the lattice constants (a ¼ 0.3191 nm and c ¼ 0.5186 nm) of the GaN layer measured from the X-ray diffraction space mapping. Post growth cooling introduced tensile strain in the GaN layer is ineffective when nucleated on the double-step AlN buffer layers, whereas the compressive and tensile strain remains in the GaN layers when nucleated on the single-step thin AlN buffer layer and directly on SiC, respectively.

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Surface structure and composition of β- and 6H-SiC

Cited by 325 publications

References 40 publications

Observations of Graphitized SiC Surfaces by STM

Observations of Graphitized SiC Surfaces by STM

Growth of epitaxial graphene: Theory and experiment

Growth of Strain Free GaN Layers on 6H‐SiC (0001) by Plasma‐Assisted Molecular Beam Epitaxy

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