The theoretical approach proposed recently for description of redistribution of electronic charge in multilayered selectively doped systems is modified for a system with finite number of layers. A special attention is payed to the case of a finite heterostructure made of copper-oxide layers which are all non-superconducting (including non-conducting) because of doping levels being beyond the well-known characteristic interval for superconductivity. Specific finite structures and doping configurations are proposed to obtain atomically thin superconducting heterojunctions of different compositions.PACS numbers: 74.78.Fk, 74.25.Jb, 74.45.+c An interesting area in nanoengineering of materials was opened in a series of experiments by Bozovič et al [1] on atomically perfect stacks of selectively doped perovskite layers. These and some other papers [2, 3] mainly used periodic multilayered structures where essential new electronic effects, as interface SC between nominally non-SC layers [3], appeared due to charge redistribution between layers and related shifts of in-plane energy bands. The basic condition for SC to appear within few perovskite layers or even in a single layer is that the local density of hole charge carriers occurs within a definite, rather narrow, interval: p min ≥ p ≥ p max with p min ≈ 0.07 and p max ≈ 0.2 (carriers per site). The required density distribution results from the corresponding shifts of in-plane energy bands by local Coulomb potentials. A simple theoretical model for such processes was proposed [4], combining a discrete version of Poisson equation for potential with a band-structure modified self-consistent Thomas-Fermi charge density. This approach gives exact solutions for infinite periodical and some other unbounded systems. However recent studies [5][6][7] showed that pronounced modification of electronic ground state and related SC transitions can be obtained either in stacks of finite (and small) number of layers which is quite promising for practical applications in nanoengineered composite devices. The following consideration aims on an extension of the previous model on an arbitrary layered system and establishing criteria for its optimum SC performance.