Partial suppression of structural distortion in epitaxially grown<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>BaBiO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>thin films

Inumaru, Kei; Miyata, Hajime; Yamanaka, Shōji

doi:10.1103/physrevb.78.132507

Cited by 26 publications

(21 citation statements)

References 35 publications

(45 reference statements)

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“…Films that were ≥ 13-u.c. thick exhibited a pseudocubic lattice parameter of c ¼ 4.334 AE 0.008 Å, which is close to that previously reported for bulk BBO [21] and BBO films [26][27][28]. Figure 2(a) shows an XRD reciprocal space map (RSM) of 120-BBO that covers the vicinity of the STO (103) reflection.…”

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confidence: 82%

Suppression of Three-Dimensional Charge Density Wave Ordering via Thickness Control

et al. 2015

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Barium bismuth oxide (BaBiO_{3}) is the end member of two families of high-T_{c} superconductors, i.e., BaPb_{1-x}Bi_{x}O_{3} and Ba_{1-x}K_{x}BiO_{3}. The undoped parent compound is an insulator, exhibiting a charge density wave that is strongly linked to a static breathing distortion in the oxygen sublattice of the perovskite structure. We report a comprehensive spectroscopic and x-ray diffraction study of BaBiO_{3} thin films, showing that the minimum film thickness required to stabilize the breathing distortion and charge density wave is ≈11 unit cells, and that both phenomena are suppressed in thinner films. Our results constitute the first experimental observation of charge density wave suppression in bismuthate compounds without intentionally introducing dopants.

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confidence: 82%

Suppression of Three-Dimensional Charge Density Wave Ordering via Thickness Control

et al. 2015

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“…These distortions are depicted in Fig. 1(b In films, the tilting distortion is suppressed [10]. arXiv:1603.01745v2 [cond-mat.supr-con] 13 Jul 2016…”

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confidence: 99%

Momentum-Resolved Electronic Structure of the High-TcSuperconductor Parent CompoundBaBiO3

et al. 2016

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We investigate the band structure of BaBiO_{3}, an insulating parent compound of doped high-T_{c} superconductors, using in situ angle-resolved photoemission spectroscopy on thin films. The data compare favorably overall with density functional theory calculations within the local density approximation, demonstrating that electron correlations are weak. The bands exhibit Brillouin zone folding consistent with known BiO_{6} breathing distortions. Though the distortions are often thought to coincide with Bi^{3+}/Bi^{5+} charge ordering, core level spectra show that bismuth is monovalent. We further demonstrate that the bands closest to the Fermi level are primarily oxygen derived, while the bismuth 6s states mostly contribute to dispersive bands at deeper binding energy. The results support a model of Bi-O charge transfer in which hole pairs are localized on combinations of the O 2p orbitals.

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“…These TSSs can then become superconducting as a result of the proximity effect with the bottom superconducting regime. Such a structure is likely to be attainable as high-quality BBO thin films, which have been successfully grown on SrTiO 3 [35][36][37] and MgO [37] substrates. And moreover, the O-tilting lattice distortion was recently found to be suppressed in a BBO(001) thin film on MgO [37], which is very close to our required cubic structure.…”

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confidence: 99%

A large-energy-gap oxide topological insulator based on the superconductor BaBiO3

2013

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Mixed-valent perovskite oxides based on BaBiO3 [1, 2] (BBO) are, like cuperates, well-known high-Tc superconductors. Recent ab inito calculations [10] have assigned the high-Tc superconductivity to a correlation-enhanced electron-phonon coupling mechanism, stimulating the prediction and synthesis of new superconductor candidates among mixed-valent thallium perovskites [4][5][6]. Existing superconductivity has meant that research has mainly focused on hole-doped compounds, leaving electron-doped compounds relatively unexplored. Here we demonstrate through ab inito calculations that BBO emerges as a topological insulator [7-10] (TI) in the electron-doped region, where the spin-orbit coupling (SOC) effect is significant. BBO exhibits the largest topological energy gap of 0.7 eV among currently known TI materials [11], inside which Dirac-type topological surface states (TSSs) exit. As the first oxide TI, BBO is naturally stable against surface oxidization and degrading, different from chalcoginide TIs. An extra advantage of BBO lies in its ability to serve an interface between the TSSs and the superconductor for the realization of Majorana Fermions [12]. arXiv:1308.2303v1 [cond-mat.mtrl-sci]

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Partial suppression of structural distortion in epitaxially grownBaBiO3thin films

Cited by 26 publications

References 35 publications

Suppression of Three-Dimensional Charge Density Wave Ordering via Thickness Control

Suppression of Three-Dimensional Charge Density Wave Ordering via Thickness Control

Momentum-Resolved Electronic Structure of the High-TcSuperconductor Parent CompoundBaBiO3

A large-energy-gap oxide topological insulator based on the superconductor BaBiO3

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