Surface-states effects on GaAs FET electrical performance

Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

“…For GaAs devices, such frequency dispersions can be directly related to surface states [12]. When the surface traps are hole traps, the interface potential follows the gate voltage as in the sidegating effects in GaAs MESFETs [13].…”

Characterization and modeling of substrate trapping in HEMTs

“…Trapping is generally thought to be due to deep-level electron or hole states in the substrate and/or the surface regions [5]- [8]. Also, there is a trade-off between impact ionization and the extent to which surface states are significant [9].…”

Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures

“…2 A requirement for most of these applications is a chemically clean interface, as certain chemical species can produce interfacial states leading to detrimental effects on device performance. 3 One means to achieve such an interface is in situ removal of material followed by epitaxial regrowth of material on the clean surface. Within the metalorganic vapor-phase epitaxy (MOVPE) technology, in situ etching using AsCl 3 , AsBr 3 , and HCl has been studied in order to reduce the interfacial charge and improve morphology during regrowth on GaAs-based structures.…”

“…3 One means to achieve such an interface is in situ removal of material followed by epitaxial regrowth of material on the clean surface. Within the metalorganic vapor-phase epitaxy (MOVPE) technology, in situ etching using AsCl 3 , AsBr 3 , and HCl has been studied in order to reduce the interfacial charge and improve morphology during regrowth on GaAs-based structures. [4][5][6][7] In situ etching using chlorine-or bromine-based compounds has been similarly employed for localized etching of InP-based material in order to minimize the impact of air exposure on devices grown by MOVPE or molecular-beam epitaxy (MBE).…”