Surface roughness and surface-induced resistivity of gold films on mica: Application of quantitative scanning tunneling microscopy

Muñoz, Raúl C.; Vidal, Guillermo; Mulsow, Marcelo; Lisoni, J. G.; Arenas, Claudio; Concha, Andres; Mora, Fernando; Espejo, Roberto; Kremer, Germán; Moraga, Luis; Esparza, Rolando; Häberle, Patricio

doi:10.1103/physrevb.62.4686

Cited by 65 publications

(46 citation statements)

References 16 publications

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“…Obtained results show the resistivity value of ~8.10 −6 Ω.cm for a 15 min (1000 V, 0.44 mA) sputtered continuous gold film and increases following the decrease of gold film thickness. This value is qualitatively consistent with the resistivity ρ Au of Au bulk (2.2.10 −6 Ω.cm [45]) taking into account contact resistance of a tip and distance imprecision between the two tips. For the thinner (discontinuous) gold film (1000 V, 0.44 mA, 2 min), the resistivity increases up to 4 Ω.cm reaching the value of a semiconducting material.…”

Section: Gold Films Depositionsupporting

confidence: 75%

“…The binding energy scale was calibrated using an internal reference. An oxygen atomic percentage of about 15% was observed, which corresponds to a weak surface oxidation and atmospheric contamination, whereas the residual carbon contamination could not be estimated since the C1s core level overlaps with the Se L 3 M 23 M 45 Auger transition. The fitted peaks of the experimental curves are defined by a combination of Gaussian (70%) and Lorentzian (30%) contributions.…”

Section: Raman Spectroscopymentioning

confidence: 99%

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RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Verger¹,

Nazabal²,

Colas³

et al. 2013

Opt. Mater. Express

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Abstract:The primary objective of this study is the development of transparent thin film materials in the IR enabling strong infrared absorption of organic compounds in the vicinity of metal nanoparticles by the surface plasmon effect. For developing these optical micro-sensors, heterostructures combining gold nanoparticles and chalcogenide planar waveguides are fabricated and adequately characterized. Single As 2 S 3 and Ge 25 Sb 10 Se 65 amorphous chalcogenide thin films are prepared by radiofrequency magnetron sputtering. For the fabrication of gold nanoparticles on a chalcogenide planar waveguide, direct current sputtering is employed. Fabricated single layers or hetero-structures are characterized using various techniques to investigate the influence of deposition parameters. The nanoparticles of gold are functionalized by a self-assembled monolayer of 4-nitrothiophenol. Finally, the surface enhanced infrared absorption spectra of 4-nitrothiophenol self-assembled on fabricated Au/Ge-Sb-Se thin films hetero-structures are measured and analyzed. This optical component presents a ~24 enhancement factor for the detection of NO 2 symmetric stretching vibration band of 4-nitrothiophenol at 1336 cm −1 . 232-239 (1999). 19. L. Tichý, H. Ticha, P. Nagels, R. Callaerts, R. Mertens, and M. Vlcek, "Optical properties of amorphous As-Se and Ge-As-Se thin films," Mater. Lett. 39(2), 122-128 (1999). 20. J. Charrier, M. L. Anne, H. Lhermite, V. Nazabal, J. P. Guin, F. Charpentier, T. Jouan, F. Henrio, D. Bosc, and J. L. Adam, "Sulphide GaxGe25-xSb10S65(x=0,5) sputtered films: Fabrication and optical characterizations of planar and rib optical waveguides," J. Appl.

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Section: Gold Films Depositionsupporting

confidence: 75%

Section: Raman Spectroscopymentioning

confidence: 99%

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Verger¹,

Nazabal²,

Colas³

et al. 2013

Opt. Mater. Express

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“…cm. [37,38] Therefore, the resistivity of gold NWs in this study was approximately 1.14 times that of the bulk metal. Given that these NWs are just 29 nm in diameter the resistivity is very low, especially when one considers the broad range of resistivities quoted in the literature.…”

mentioning

confidence: 99%

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

et al. 2010

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The electronics industry has consistently decreased the dimensions of structural components and they are now well into the nanoscale range. Naturally, a significant portion of the chip is composed of interconnects. Besides, the engineering problems associated with short wavelength lithography to achieve smaller components, the performance of increasing number of interconnections has become one of the biggest limiting factors in device performance.[1,2] The power loss, signal degradation, interconnection delays, and other performance limitations related to interconnects should be minimized. The importance of such a task can be seen from the perspective of power dissipation by computation elements. The energy dissipation density in electronic chips approaches that in nuclear reactors. [3,4]

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“…Then, the short-range correlations can be described by the equation CðrÞ ¼ r 2 exp ½Àðr=nÞ 2h , where r is a pre-exponential factor, n is the correlation length and h (0 < h < 1) is a parameter related to the roughness of a "polarization interface." 30 Based on the autocorrelation images (not shown here), the autocorrelation CðrÞ at small r were recorded for PLZT thin films with different thicknesses and plotted in Fig. 6(a) with its corresponding best fits.…”

Section: Resultsmentioning

confidence: 99%

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

Melo

Araújo

Shvartsman

et al. 2016

Journal of Applied Physics

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Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO2/SiO2/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

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Surface roughness and surface-induced resistivity of gold films on mica: Application of quantitative scanning tunneling microscopy

Cited by 65 publications

References 16 publications

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

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