Surface reactions of vapor phase titanium atoms with halogen and nitrogen containing polymers studied using in situ X-ray photoelectron spectroscopy and atomic force microscopy

Carlo, S. R.; Perry, Christopher C.; Torres, J.; Wagner, A.; Vecitis, Chad D.; Fairbrother, D. Howard

doi:10.1016/s0169-4332(02)00539-1

Cited by 23 publications

(8 citation statements)

References 38 publications

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“…15 This is consistent with previous observation of Ritala and co-workers who also reported a higher growth per cycle when metal alkoxides were used at the oxygen source during ALD of other metal oxides: A higher growth per cycle is expected for the TTIP-TiCl 4 ALD process as Ti is incorporated into the film during both half-reaction cycles. 39 Figure 4(a) shows the Ti 2p and O 1s region for a TiO 2 film deposited at 200 C. The deconvolution of the Ti 2p region yielded two peaks centered at 458.7 and 464.4 eV assigned to Ti 2p 3/2 and Ti 2p 1/2 , respectively, 40,41 for Ti atoms in the þ4 oxidation state, indicating that there is no detectable suboxide. Figure 4 shows the XPS data for films deposited at 200 and 225 C on piranha-treated glass slides.…”

Section: Resultsmentioning

confidence: 99%

“…The energy scale in each spectrum was calibrated with respect to the adventitious C peak at 285.0 eV. The peaks centered at 198.6 and 200.4 eV were assigned to Cl bonded to Ti and C, respectively: 41 The Cl 2p 3/2 peak at 200.4 eV can be attributed to surface hydrocarbons that react with a Cl-terminated surface, since the last ALD cycle in the growth process was a TiCl 4 dose. 39 The Ti 2p, O 1s, and Cl 2p peaks in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Chaukulkar

Agarwal

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inWaterless TiO2 atomic layer deposition using titanium tetrachloride and titanium tetraisopropoxide J. Vac. Sci. Technol. A 32, 01A114 (2014); 10.1116/1.4839015 Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition J. Vac. Sci. Technol. A 30, 021202 (2012); 10.1116/1.3687939 In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition J. Vac. Sci. Technol. A 30, 01A158 (2012); 10.1116/1.3670404Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water Most atomic layer deposition (ALD) processes for metal oxides involve the use of a metal precursor and an oxygen source, such as H 2 O, O 3 , or an O 2 plasma. These ALD processes lead to the formation of an undesirable interfacial oxide during deposition on semiconductor surfaces. As an alternative, some metal oxides other than TiO 2 have been deposited using metal alkoxides as the oxygen source. In this article, we report on the ALD of TiO 2 using TiCl 4 and titanium tetraisopropoxide (TTIP) as precursors. Our surface infrared spectroscopy data shows that over the temperature range of 150-250 C and the duration of a typical ALD cycle ($1-10 s), in both halfreaction cycles, the surface reaction mechanism is dominated by alkyl-transfer from the TTIP ligands to Ti-Cl species. At 250 C, which is the onset for TTIP thermal decomposition, the contribution of the direct decomposition reaction to film growth is negligible. The growth per cycle, $0.7 Å at 200 C, is higher than H 2 O-based ALD of TiO 2 from either TiCl 4 or TTIP, but similar to O 2 -plasma-based processes. X-ray photoelectron spectroscopy data show TiO 2 films with only the þ4 oxidation state of Ti, and the Cl content is estimated to be 2.5-3.5%. UV-Vis spectroscopy shows a band gap of $3.0 eV, which is comparable to the values reported in the literature for amorphous TiO 2 thin films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Chaukulkar

Agarwal

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…SiF 4 was also found to be responsible for the PTFE activated solid-state reaction synthesis of MoSi 2 -SiC composites [12] . In this regard, it should also be noted that the formation of TiF 3 was clearly observed in the literature [24,26] , which specifically contributed to the investigation of the reaction between metallic titanium and PTFE-based polymers.…”

mentioning

confidence: 75%

“…According to the reports [11,17,19,[23][24][25][26] , the possible reaction equations and enthalpies in present Ti-B-PTFE system are summarized systematically as follows:…”

Section: Mechanism Analysismentioning

confidence: 99%

Low-temperature Solid-state Synthesis of Nanometer TiB$lt;inf$gt;2$lt;/inf$gt;-TiC Composite Powder

Yin-hu¹,

Wang²,

Qiu-Ping³

et al. 2016

Journal of Inorganic Materials

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TiB 2 -TiC composite powders were prepared at low temperature in the Ti-B system with the PTFE polytetrafluoroethylene (polytetrafluoroethylene) as a chemical activator. Reaction temperature, phase composition and morphology were measured via differential thermal analysis, X-ray diffraction and field emission scanning electron microscopy (FESEM) in order to explore the reaction mechanism, respectively. Actual solid-state reaction synthesis experiments were carried out for the same composition in an argon atmosphere furnace. It was found that TiB 2 -TiC composite powder could be synthesized successfully at 550℃ by adding 10wt% PTFE into the initial reactant Ti-B mixture. The FESEM image showed that the average size of the product was smaller than 400 nm. According to differential thermal analysis results, the combustion synthesis mainly includes two reaction processes: firstly, the initial reaction between titanium and PTFE particles resulting in great amounts of heat release; subsequently, the released energy triggers the solid-state reaction between titanium and boron particles to form TiB 2 .

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“…Due to the changes in surface structures in different environments, surface structural information detected from high-vacuum techniques cannot always provide accurate in situ data. We are applying atomic force microscopy (AFM) and sum frequency generation (SFG) vibrational spectroscopy, both of which are in situ surface-sensitive techniques, − to examine surface structures of polymer blends in air and water and monitor their surface restructuring over time.…”

Section: Introductionmentioning

confidence: 99%

Surface Restructuring of Polystyrene/Polymethacrylate Blends in Water Studied by Atomic Force Microscopy

Woodcock

Chen

2004

Langmuir

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Blends of poly(n-butyl methacrylate) (PBMA)/polystyrene (PS) and poly(n-octyl methacrylate) (POMA)/PS were imaged with atomic force microscopy in both ambient and aqueous environments. The surfaces of the blends were monitored over time under water, and most PBMA/PS and POMA/PS samples showed no surface restructuring. A morphology change, however, was observed for high ratios of POMA and specific ratios of PBMA in the blend. For the blend of 60% PBMA and 40% PS, the surface was pitted in air with depths of 60 nm. In water, as the exposure time increased, islands replaced the holes on the surface. The height of these islands averaged 50 nm. At high ratios of POMA, in POMA/PS blends, the surface structure also changed when contacted with water. The structural changes that were observed for all of these select blends were reversible after the surface was dried and reimaged in air. Sum frequency generation vibrational spectroscopy was used to give insight into the functional groups and surface chemical composition of the blends in air and water.

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Surface reactions of vapor phase titanium atoms with halogen and nitrogen containing polymers studied using in situ X-ray photoelectron spectroscopy and atomic force microscopy

Cited by 23 publications

References 38 publications

Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Low-temperature Solid-state Synthesis of Nanometer TiB$lt;inf$gt;2$lt;/inf$gt;-TiC Composite Powder

Surface Restructuring of Polystyrene/Polymethacrylate Blends in Water Studied by Atomic Force Microscopy

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