Surface Quantum Wells in Hydrogen Implanted ZnO

Bogatu, V.; Goldenblum, A.; Many, A.; Goldstein, Y.

doi:10.1002/(sici)1521-3951(199903)212:1<89::aid-pssb89>3.0.co;2-a

Cited by 20 publications

(10 citation statements)

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“…There is some experimental support for the predicted observations of its muonium counterpart 26 -29 and from electron paramagnetic resonance of single-crystal samples. 30,31 There have been many other studies on the effects of hydrogen on the electrical and optical properties of ZnO, [32][33][34][35][36][37][38][39] but no detailed study on the thermal stability of implanted hydrogen.…”

mentioning

confidence: 99%

Thermal stability of ion-implanted hydrogen in ZnO

Overberg

Heo

et al. 2002

Applied Physics Letters

102

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confidence: 99%

Thermal stability of ion-implanted hydrogen in ZnO

Overberg

Heo

et al. 2002

Applied Physics Letters

102

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“…The boundary conditions are such that V H ͑0͒ =0 and ‫ץ‬V H ͑ϱ͒ / ‫ץ‬z =0. [29][30][31] It was pointed out [16][17][18][19] that the donor density distribution in ZnO, especially under hydrogen-ion bombardment, is of Gaussian shape with a peak at some point z D Ͼ 0 so that…”

Section: A Confining Potentials In a Gaussian-doped Surface Quantum mentioning

confidence: 99%

“…Indeed, the Coulomb repulsion between charged donors along the quantization direction gives rise to an inhomogeneous doping profile. For ion-implanted ZnO, the theoretical 16,17 and experimental 18,19 studies stipulate a Gaussian distribution for the impurities. This is distinct from the doping profiles explored extensively so far, where the impurity density is constant in the whole doping region.…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, the quality of the naked surface of SFQWs is, in general, lower than that of buried interfaces in heterostructures. 17,20 Recent experimental studies provided evidence that the pure ZnO layer is rather rough. [21][22][23] Further, it was pointed out [24][25][26] that ZnO in the natural ͑wurtzite͒ phase has a large spontaneous polarization ͑twice of that of GaN͒.…”

Section: Introductionmentioning

confidence: 99%

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Electron mobility in Gaussian heavily doped ZnO surface quantum wells

2008

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We present a theory of the low-temperature mobility of electrons in a Gaussian heavily doped zinc oxide surface quantum well ͑ZnO SFQW͒, taking into account both surface impurity and surface roughness scattering. The theory also includes strong confinement due to spontaneous polarization charges on the surface of ZnO. The electron distribution is found to be shifted closer to the surface for the O-polar face, while far away therefrom for the Zn-polar one. Accordingly, both scatterings are remarkably enhanced in the former case, while reduced in the latter one. Further, high-temperature Coulomb correlation among the charged impurities at a high density in a sample subjected to thermal treatment is proven to significantly reduce scattering by them. Therefore, in such a sample, surface roughness scattering dominates the electron mobility, while for a sample without thermal treatment, both scatterings are important. Our theory provides a good quantitative explanation of the experimental data on electron transport, in particular, the different carrier-density dependences of the mobilities measured in O-polar face ZnO SFQWs prepared in different ways, by bombardment with H 2 + ions and by exposure to He + ions, which has not been explained so far.

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“…[1][2][3][4][5] The free surface in a surface quantum well ͑SQW͒ exhibits a distinction from buried interfaces in a quantum well ͑QW͒. Accessibility of one face of a SQW enables gradual etching of the well width to study the width dependence of its observable properties.…”

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Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well

et al. 2003

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A theoretical study is presented of effects from strain fluctuations in a surface quantum well ͑SQW͒, which is composed of a strained zinc-blende-structure layer grown on a ͑001͒ substrate. It is found that in analogy to a zinc-blende quantum well ͑QW͒ with buried interfaces there always exist in the SQW a large fluctuating density of bulk piezoelectric charges and a high random piezoelectric field. However, in contrast to the buried QW case, roughness at a free surface of the SQW causes random fluctuations in the dilatation, which give rise to perturbing deformation potentials. The piezoelectric field and deformation potentials supply strong disorder interactions as new important scattering mechanisms for confined charge carriers in SQW's. A comparison of their effects in a SQW and the QW under equal conditions is given.

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Surface Quantum Wells in Hydrogen Implanted ZnO

Cited by 20 publications

References 0 publications

Thermal stability of ion-implanted hydrogen in ZnO

Thermal stability of ion-implanted hydrogen in ZnO

Electron mobility in Gaussian heavily doped ZnO surface quantum wells

Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well

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