Surface potential pinning study for oxygen terminated IIa diamond

Zhang, Sen; Liu, Kang; Liu, Benjian; Zhang, Xiaohui; Qiao, Pengfei; Zhao, Junhong; Li, Yicun; Hao, Xiaobin; Liang, Ying; Liang, Bo; Zhang, Wenchao; Dai, Bing; Han, Jiecai; Zhu, Jiaqi

doi:10.1016/j.carbon.2023.01.021

Cited by 2 publications

(1 citation statement)

References 45 publications

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“…[27,28] Odiamond has a positron affinity of 1.7 eV. [29] Zhang et al [30] demonstrated that O-diamond can efficiently pin the Fermi level in a fixed position regardless of the metallic material. Because H-diamond has NEA it is conducive to electron transmission when forming an ohmic contact.…”

Section: Resultsmentioning

confidence: 99%

Effect of surface modification on the radiation stability of diamond ohmic contacts

Zhao

Wang

et al. 2024

Chinese Phys. B

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The ohmic contact interface between diamond and metal is essential for the application of diamond detectors. Surface modification can significantly affect the contact performance and eliminate the interface polarization effect. However, the radiation stability of diamond detector is also sensitive to the surface modification. In this work, the influence of surface modification technology on diamond ohmic contact under high-energy radiation was investigated. Before radiation, the specific contact resistivity (ρc ) between Ti/Pt/Au-hydrogen terminated diamond (H-diamond) and Ti/Pt/Au-oxygen terminated diamond (O-diamond) were 2.0 × 10-4 Ω·cm2 and 4.3 × 10-3 Ω·cm2 respectively. After 10 MeV electron radiation, the ρc of Ti/Pt/Au-H-diamond and Ti/Pt/Au-O-diamond were 5.3 × 10-3 Ω·cm2 and 9.1 × 10-3 Ω·cm2 respectively. The change rate of ρc of H-diamond and O-diamond after radiation were 2550% and 112% respectively. The electron radiation promotes the bond reconstruction of diamond surface resulting in the increasing of the ρc .

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Section: Resultsmentioning

confidence: 99%

Effect of surface modification on the radiation stability of diamond ohmic contacts

Zhao

Wang

et al. 2024

Chinese Phys. B

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Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Zhang,

Liu,

Zhang

et al. 2024

J. Phys. Chem. Lett.

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The development of monolithic integrated energy-efficient complementary circuits is crucial for the large-scale application of wide bandgap semiconductor-based high-frequency and high-power field-effect transistors (FETs). However, the inferior performance of p-channel FETs attributed to low hole density and mobility presents a substantial challenge. Diamond is a promising candidate due to its excellent comprehensive electrical properties and high thermal conductivity. Here, we report the fabrication of normally off diamond FETs based on a low work function metal gate and (110) hydrogen-terminated diamond with high hole density. The use of high-quality SiO2 layer ensures the complete depletion of the channel by the gate and offers high gating efficiency. Therefore, the developed devices demonstrate exceptional reproducibility of normally off characteristics with centrally distributed threshold voltages (−0.37 ± 0.3 V) and realize large current and voltage handling capabilities and low static standby power consumption in a synergic manner with record-high on/off ratio exceeding 1010, high current density (∼200 μA·μm–1), ultralow off-state current (∼fA·μm–1), and high breakdown voltage (−676 V). Additionally, the thermal desorption of negatively charged acceptors has been proven to significantly reduce carrier scattering. This work offers superior performance p-channel FETs for implementing energy-efficient complementary circuits, laying the groundwork for accelerated development in wide bandgap semiconductor power electronics.

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Surface potential pinning study for oxygen terminated IIa diamond

Cited by 2 publications

References 45 publications

Effect of surface modification on the radiation stability of diamond ohmic contacts

Effect of surface modification on the radiation stability of diamond ohmic contacts

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

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