Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides

Fragkos, Ioannis E.; Tansu, Nelson

doi:10.1038/s41598-018-31821-8

Cited by 14 publications

(3 citation statements)

References 54 publications

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“…Although some works mentioned to use metal‐nitride plasmonic materials, like Hafnium nitride (HfN), zirconium nitride (ZrN), and titanium nitride (TiN) replacing for the traditional noble metals, the trial still required further development. [ 70 ]…”

Section: Surface Plasmonsmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Section: Surface Plasmonsmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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“…This is in addition to their already well-known use in state-of-the-art light-emitting diodes (LEDs) and laser diodes (LDs) [11][12][13]. Recent work on this materials' family has also shown its potential for use in solar cells and thermoelectric generators [14,15], novel spintronic and nuclear detection devices [16], plasmonics [17,18], and quantum computing [19,20]. These applications are a result of some attractive properties of this material system, which include (a) high electron mobility, (b) high thermal stability and breakdown field, (c) wide coverage of the direct bandgap range (0.7 eV through 6.2 eV), and (d) well-developed epitaxial growth techniques [21,22].…”

Section: Introductionmentioning

confidence: 96%

Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices

et al. 2022

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The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride superlattices (SLs) lead to the periodic oscillation of the energy bands, exhibiting enhanced ionization of the deep acceptors (Mg in this study), and hence their use in III-nitride semiconductor-based light-emitting diodes (LEDs) and p-channel FETs is beneficial. This study experimentally demonstrates the presence of acceptor-like traps at the positive polarization interfaces acting as the primary source of holes in Ga-polar p-type uniformly doped (AlGaN/AlN)/GaN SLs with limited Mg doping. The observed concentration of holes exceeding that of the dopants incorporated into the samples during growth can be attributed to the ionization of acceptor-like traps, located at 0.8 eV above the valence band of GaN, at positive polarization interfaces. All samples were grown using the metal organic vapor phase epitaxy (MOVPE) technique, and the materials’ characterization was carried out using X-ray diffraction and Hall effect measurements. The hole concentrations experimentally measured are juxtaposed with the calculated value of hole concentrations from FETIS®, and the measured trends in mobility are explained using the amplitude of separation of the two-dimensional hole gas in the systems from the positive polarization interfaces.

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“…These include hyperbolic metamaterials, plasmon driven photochemical activity and photodetection, local heating and solar heat transduction, enhancing quantum efficiency of emitters, and surface enhanced Raman scattering. 38–46 Plasmonic TiN substrates have also been investigated for label-free surface plasmon resonance based detection of analytes like, glucose, biotin and streptavidin. 47,48 However, to the best of our knowledge, the coupling of fluorescence with optical modes supported by TiN substrates for obtaining SPCE or waveguide coupled emission (WGCE) has not been examined so far.…”

Section: Introductionmentioning

confidence: 99%