Surface photovoltage spectra and surface states of GaAs(100) with submonolayers of Cu and Pd

Musatov, A. L.; Smirnov, S. Yu.

doi:10.1016/0039-6028(92)91391-n

Cited by 8 publications

(7 citation statements)

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“…Studies of the evolution of metal±semiconductor interfaces using SPS were pioneered by Mo Ènch et al [330] and by Brillson [323,372,373], with later studies being conducted mostly by Shapira et al [324,352,370] and Musatov et al [108,338,339,347]. An example is found in Fig.…”

Section: Gap State Spectroscopymentioning

confidence: 99%

“…(2.84)), and extrapolated to zero to ®nd the threshold energy [101,108,289]. Using this approach, Musatov et al [108,338,339] have studied the coverage dependence of metal-induced surface states. They have found that in many cases the energy position of the induced states is ®xed, but in some cases it varies with coverage.…”

Section: Gap State Spectroscopymentioning

confidence: 99%

“…Musatov and Smirnov [338] suggested that if the SPV is small enough, it is expected to be proportional to the photo-current, where the latter is simply equal to eg opt n . Assuming further that the population of the surface states is approximately constant, the dependence of the SPV on the photon energy is then expected to directly follow the dependence of ' n on h#.…”

Section: Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,501

804

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Section: Gap State Spectroscopymentioning

confidence: 99%

Section: Gap State Spectroscopymentioning

confidence: 99%

Section: Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,501

804

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“…Equation ͑19͒ can be compared to an expression originally derived within thermionic emission theory for current transport in metal-semiconductor contacts 24 and commonly used in the analysis of photovoltage as a function of light intensity 26,30,48…”

Section: B Steady-state Photovoltage and Its Dependence On Light Intmentioning

confidence: 99%

Surface photovoltage in undoped n-type GaN

Reshchikov

Foussekis

Baski

2010

Journal of Applied Physics

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Steady-state and transient surface photovoltage ͑SPV͒ in undoped GaN is studied in vacuum and air ambient at room temperature and 400 K with a Kelvin probe. The results are explained within a phenomenological model accounting for the accumulation of photogenerated holes at the surface, capture of free electrons from the bulk over the near-surface potential barrier, and emission of electrons from surface states into the bulk. Simple analytical expressions are obtained and compared with experimental results. In particular, the proposed model explains the logarithmic decay of the SPV after stopping illumination. Internal and external mechanisms of the SPV are discussed in detail. It is shown that an internal mechanism dominates at low illumination intensity and/or small photon energies, while external mechanisms such as charging of a surface oxide layer and photoinduced processes play a significant role for above-bandgap illumination with sufficient intensity.

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“…It is true that the surface photovoltage can be used to probe the non-metal to metal transition (Hamawi & Walldén 1992;D. Li et al 1992;Musatov & Smirnov 1992;Waddill et al 1990) effectively by probing the surface conductivity of the semiconductor substrate following thin film or cluster deposition. Nonetheless, conventional measures of conductivity, as well as indirect measures of surface conductivity (like the surface photovoltage), could fail to detect the non-metal to metal transition for many overlayer and thin film systems.…”

Section: Experimental Indicators (A ) Conductivitymentioning

confidence: 99%