Surface phases on silicon

Lifshits, V.G.; Gavrilyuk, Yu. L.; Саранин, А. А.; Зотов, А. В.; Tsukanov, D. A.

doi:10.1070/pu2000v043n05abeh000754

Cited by 70 publications

(61 citation statements)

References 14 publications

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“…(1) Variety: More than 300 kinds of surface superstructures are found on silicon crystals with foreign adsorbates of around monolayer coverages [5]. Their surface-state bands are known to show a rich variety of characters, some of which are introduced in Section 3.…”

Section: Electrical Conduction At Semiconductor Surfacesmentioning

confidence: 99%

“…But today, under ultra-high vacuum (UHV) conditions in which the number of residual gas molecules is less than in the outer space, it is possible to tailor the crystallographic structure of semiconductor surfaces accurately, for example, by dosing the surface with small amounts (around a monolayer) of specific materials under precise control. As a result, a variety of surface superstructures--peculiar, but regular atomic arrangements of the topmost atomic layers on surfaces, a kind of two-dimensional (2D) crystals--are created [5]. There is an intimate and profound relation between the crystallographic structure of a material and its electronic properties.…”

Section: Introductionmentioning

confidence: 99%

“…This is a resultant atomic arrangement of the minimum free energy at the clean surface, leads to only 19 dangling bonds, much fewer than on an unreconstructed surface. Furthermore, the same surface can go through a variety of complete structural rearrangements on absorption of only a fraction of a monolayer of foreign atoms to attain the lowest surface free energy [5]. These are adsorbate-induced surface superstructures in which atomic arrangements are in general quite different from those of the corresponding bulk alloys and compounds.…”

Section: Introductionmentioning

confidence: 99%

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Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes

Hasegawa

Grey

2002

Surface Science

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The electrical properties of semiconductor surfaces have played a decisive role in one of the most important discoveries of the last century, transistors. In the 1940s, the concept of surface states--new electron energy levels characteristic of the surface atoms--was instrumental in the fabrication of the first point-contact transistors, and led to the successful fabrication of field-effect transistors. However, to this day, one property of semiconductor surface states remains poorly understood, both theoretically and experimentally. That is the conduction of electrons or holes directly through the surface states. Since these states are restricted to a region only a few atom layers thick at a crystal surface, any signal from them might be swamped by conduction through the underlying bulk semiconductor crystal, as well as greatly perturbed by steps and other defects at the surface. Yet recent results show that this type of conduction is measurable using new types of experimental probes, such as the multi-tip scanning tunnelling microscope and the micro-four-point probe. The resulting electronic transport properties are intriguing, and suggest that semiconductor surfaces should be considered in their own right as a new class of electronic nanomaterials because the surface states have their own characters different from the underlying bulk states. As microelectronic devices shrink even further, and surface-to-volume ratios increase, surfaces will play an increasingly important role. These new nanomaterials could be crucial in the design of electronic devices in the coming decades, and also could become a platform for studying the physics of a new family of low-dimensional electron systems on nanometre scales. Ó

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Section: Electrical Conduction At Semiconductor Surfacesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes

Hasegawa

Grey

2002

Surface Science

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“…This ''surface reconstruction'' amounts to material parameters that can vary appreciably across adjacent terraces and has received considerable attention. In particular, the Si(001) system manifests a reconstruction in which dimer rows (chains of bonded atoms) alternate from perpendicular to parallel to step edges across terraces [16][17][18][19].…”

Section: Physical Motivationmentioning

confidence: 99%

Homogenization of composite vicinal surfaces: Evolution laws in 1+1 dimensions

Margetis

Nakamura

2012

Physica D: Nonlinear Phenomena

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a b s t r a c tWe apply classical homogenization to derive macroscopic relaxation laws for crystal surfaces with distinct inhomogeneities at the microscale. The proposed method relies on a formal multiscale expansion in one spatial coordinate. This approach transcends the coarse graining applied previously via Taylor expansions. Our work offers an extension of the static homogenization formulated in a brief report [D. Margetis, Homogenization of reconstructed crystal surfaces: Fick's law of diffusion, Phys. Rev. E 79 (2009) 052601] to account for surface evolution. The starting point is the Burton-Cabrera-Frank (BCF) model for the motion of line defects (steps) separating nanoscale terraces. We enrich this model with sequences of distinct material parameters, i.e., disparate diffusivities of adsorbed atoms (adatoms) across terraces, kinetic sticking rates at step edges, and step energy parameters for elastic-dipole interactions. Multiscale expansions for the adatom concentration and flux are used, with a slow diffusive time scale consistent with the quasi-steady regime for terrace diffusion. The ensuing macroscopic, nonlinear evolution laws incorporate averages of the microscale parameters.

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“…After in-situ formation of Ag islands on clean Si substrates, we use the balance between diffusion and desorption at elevated temperatures to image an iso-line of the coverage on the surface. The method relies on a particular desorption mechanism, where Ag desorbs predominantly from the surface, while the islands decay by feeding Ag adatoms into the surface layer [10,11]. As a result, a coverage gradient is formed.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy of Ag Diffusion on Vicinal Si Surfaces

Sindermann

Wall

Roos

et al. 2010

e-J. Surf. Sci. Nanotechnol.

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Photoemission electron microscopy (PEEM) is used to study Ag surface diffusion on vicinal Si surfaces. The diffusion field is represented by Iso-Coverage Zones around Ag islands during desorption. By analyzing the shape and radius of the Iso-Coverage Zone we can determine diffusion parameters. For anisotropic diffusion the zone has an elliptical shape and the aspect ratio gives a measure for the anisotropy. Using this technique, we study the degree of anisotropy of Ag diffusion on vicinal Si(001) and Si(111). With increasing miscut angles, starting from Si(001) as well as from Si (111), we find a gradually increasing anisotropy, caused by the higher step density. On higher index surfaces, like Si(119), Si(115) and Si(113), we find isotropic diffusion for surfaces with comparable dimer and (double) step structure as on Si (001)-4 • , where diffusion is strongly anisotropic.

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Surface phases on silicon

Cited by 70 publications

References 14 publications

Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes

Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes

Homogenization of composite vicinal surfaces: Evolution laws in 1+1 dimensions

Anisotropy of Ag Diffusion on Vicinal Si Surfaces

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