Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates

Kang, Man-Su; Armitage, John; Andaji‐Garmaroudi, Zahra; Sirringhaus, Henning

doi:10.1002/advs.202101502

Cited by 7 publications

(9 citation statements)

References 47 publications

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“…Over the past decades, polymer semiconductors have attracted great deal of attention for their potential benefits in industries such as flexible displays, electronics, sensing and healthcare, and renewable energy. [ 1 − 8 ] A great variety of scientific concepts and technologies in improving their charge‐transport properties have been explored and practiced from molecular design, [ 9,10 ] synthetic method, [ 11,12 ] purification, [ 13,14 ] thin film microstructural optimization, [ 15,16 ] device configuration and fabrication, [ 17 − 20 ] to device interface engineering. [ 21 − 23 ] To be blunt, however, the carrier mobilities and device stability of polymer semiconductors nowadays are generally not adequate for the requirements of next‐generation organic electronics.…”

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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Record‐High Electron Mobility Exceeding 16 cm² V⁻¹ s⁻¹ in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

et al. 2023

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and technologies in improving their charge-transport properties have been explored and practiced from molecular design, [9,10] synthetic method, [11,12] purification, [13,14] thin film microstructural optimization, [15,16] device configuration and fabrication, [17−20] to device interface engineering. [21−23] To be blunt, however, the carrier mobilities and device stability of polymer semiconductors nowadays are generally not adequate for the requirements of next-generation organic electronics. For example, the polymer semiconductors with carrier mobilities greater than 10 cm 2 V −1 s −1 are still few so far and almost all of them are thiophene-flanked diketopyrrolopyrrolebased copolymers (Table S1, Supporting Information). More importantly, the ambipolar or n-type polymer semiconductors with electron mobility exceeding 10 cm 2 V −1 s −1 are quite rare, although they are of great importance for fabricating polymer field-effect transistors (PFETs) and complementary metal-oxidesemiconductor-like circuits toward commercial high-grade electronics. [17,24−27] Nevertheless, the obtained fundamental understandings on charge-carrier transport mechanism in the exploring process still shows us invaluable guidelines for constructing high-mobility polymer semiconductors and PFETs. One fundamental understanding is "intrachain charge-carrier transport along the conjugated backbone chains is much faster than interchain charge-carrier transport, and the key limitation Polymer semiconductors with mobilities exceeding 10 cm 2 V −1 s −1 , especially ambipolar and n-type polymer semiconductors, are still rare, although they are of great importance for fabricating polymer field-effect transistors (PFETs) toward commercial high-grade electronics. Herein, two novel donor−acceptor copolymers, PNFFN-DTE and PNFFN-FDTE, are designed and synthesized based on the electron-deficient bisisoindigo (NFFN) and electron-rich dithienylethylenes (DTE or FDTE). The copolymer PNFFN-DTE, containing NFFN and DTE, possesses a partially locked polymeric conjugated backbone, whereas PNFFN-FDTE, containing NFFN and FDTE, has a fully locked one. Fluorine atoms in FDTE not only induce the formation of additional CH•••F hydrogen bonds, but also lower frontier molecular orbitals for PNFFN-FDTE. Both PNFFN-DTE and PNFFN-FDTE form more ordered molecular packing in thin films prepared from a polymer solution in bicomponent solvent containing 1,2-dichlorobenzene (DCB) and 1-chloronaphthalene (with volume ratio of 99.2/0.8) than pure DCB. The two copolymers-based flexible PFETs exhibit ambipolar charge-transport properties. Notably, the bicomponent solvent-processed PNFFN-FDTE-based PFETs afford a high electron mobility of 16.67 cm 2 V −1 s −1 , which is the highest electron-transport mobility for PFETs reported so far. The high electron mobility of PNFFN-FDTE is attributed to its fully locked conjugated backbone, dense molecular packing, and much matched LUMO energy level.

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Section: Introductionmentioning

confidence: 99%

“…

…”

mentioning

confidence: 99%

Record‐High Electron Mobility Exceeding 16 cm² V⁻¹ s⁻¹ in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

et al. 2023

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“…On the other hand, full swing from ground to 9.93 V and a gain of approximately 100 V/V were obtained from very sharp switching characteristics from the improved performance of IZO TFT through UVNOI treatment, as shown in Figure 9f. [83] with permission from John Wiley and Sons).…”

Section: Metal-oxide-based Thin-film Analog Circuitsmentioning

confidence: 99%

Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits

Kim

Yoo

2022

Micromachines

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Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. Despite these advantages, most efforts for thin-film transistors still remain at the level of unit devices, so the circuit level for practical use needs to be further developed. In this regard, this review revisits digital and analog thin-film circuits using carbon nanotubes (CNTs), organic electrochemical transistors (OECTs), organic semiconductors, metal oxides, and two-dimensional materials. This review also discusses how to integrate thin-film circuits at the unit device level and some key issues such as metal routing and interconnection. Challenges and opportunities are also discussed to pave the way for developing thin-film circuits and their practical applications.

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“…For most OS TFTs, the presence of oxygen-related species, such as oxygen vacancies (V O ) or hydroxyl/carbonate species (O-H/C-O), has a considerable impact on their electrical performance [15,16]. Generally, V O readily creates shallow or deep donor states in the oxide channel layer.…”

Section: Introductionmentioning

confidence: 99%

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

Xiao

Yuvaraja

Chettri

et al. 2023

J. Phys. D: Appl. Phys.

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Indium oxide (In2O3) thin films sputtered at room temperature were annealed under different atmospheres and examined for thin-film transistor (TFT) active channel applications. The annealing process was performed in a rapid thermal annealing system at 350 °C under O2, Ar, forming gas (FG, 96% N2/4% H2), and N2. It was found that the annealed In2O3 TFTs exhibited high field-effect mobility (μFE >40 cm2V−1s−1), high on/off current ratio (Ion/off ~108), and controlled threshold voltage (VTH) for the enhancement- and depletion-mode operations. Note that the annealing atmosphere has a significant effect on the electrical performance of the In2O3 TFTs by inducing changes in oxygen-related species, particularly oxygen vacancies (VO) and hydroxyl/carbonate species (O–H/C–O). For the O2-, Ar-, FG-, and N2-annealed TFTs, μFE was in increasing order accompanied by a negative shift in VTH, which is a result attributed to the larger VO in the In2O3 thin films. Furthermore, the ΔVTH of the FG-, and N2-annealed TFTs in a positive bias stress (PBS) test was greater than that of the O2-, Ar-annealed devices, attributing to their lower density of O–H/C–O groups in the In2O3 thin films. Our results suggest that the annealing atmosphere contributes to the internal modifications of the In2O3structure and in turn altered the electrical characteristics of TFTs. These annealed In2O3 TFTs with high performance are promising candidates for realizing large-area, transparent, and high-resolution displays.

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Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates

Cited by 7 publications

References 47 publications

Record‐High Electron Mobility Exceeding 16 cm² V⁻¹ s⁻¹ in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Record‐High Electron Mobility Exceeding 16 cm² V⁻¹ s⁻¹ in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

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Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates

Cited by 7 publications

References 47 publications

Record‐High Electron Mobility Exceeding 16 cm2 V−1 s−1 in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Record‐High Electron Mobility Exceeding 16 cm2 V−1 s−1 in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

Contact Info

Product

Resources

About

Record‐High Electron Mobility Exceeding 16 cm² V⁻¹ s⁻¹ in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Record‐High Electron Mobility Exceeding 16 cm² V⁻¹ s⁻¹ in Bisisoindigo‐Based Polymer Semiconductor with a Fully Locked Conjugated Backbone