2018
DOI: 10.1016/j.nanoen.2018.05.035
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Surface passivation of perovskite layers using heterocyclic halides: Improved photovoltaic properties and intrinsic stability

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Cited by 92 publications
(85 citation statements)
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“…The integrated current density from the external quantum efficiency (EQE) was 21.5 mA cm −2 (Figure 5b), which is in agreement with data obtained from the measurement of J–V curves reported. As previously reported,10 even in this case the optical bandgap remain unchanged after deposition of the passivation layer, and it can be stated that the low‐dimensional perovskite formed atop of the 3D perovskite does not affect the optical properties of the material. Furthermore, EQE decreases to half the peak value and the differential of the EQE (Figure S7a, Supporting Information) suggests that the absorption threshold is 1.61 eV.…”
Section: Device Fabrication and Characterizationsupporting
confidence: 78%
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“…The integrated current density from the external quantum efficiency (EQE) was 21.5 mA cm −2 (Figure 5b), which is in agreement with data obtained from the measurement of J–V curves reported. As previously reported,10 even in this case the optical bandgap remain unchanged after deposition of the passivation layer, and it can be stated that the low‐dimensional perovskite formed atop of the 3D perovskite does not affect the optical properties of the material. Furthermore, EQE decreases to half the peak value and the differential of the EQE (Figure S7a, Supporting Information) suggests that the absorption threshold is 1.61 eV.…”
Section: Device Fabrication and Characterizationsupporting
confidence: 78%
“…Arguably, the use of a passivation layer at the perovskite/HTM interface improves the charge extraction from the perovskite and prolong the lifetime of the devices 10,16. In the past,10,17 an improvement in the V OC and the fill factor (FF) of perovskite‐based devices was reported, due to fine energy level alignment between layers that improves the charge extraction.…”
Section: Characterization Of the Perovskite Filmsmentioning
confidence: 99%
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“…The PL intensity of the perovskite film w TPFPB passivation exhibits a stronger band emission at 804 nm relative to the control film at the same excitation, indicating lower nonradiative recombination loss compared with the control sample . The most probable reason is that fluorine ions in the TPFPB can introduce excess halides onto the perovskite surface to compensate/fill any iodide vacancies, thereby passivating the nonradiative recombination pathways and leading to high luminescence efficiencies . Figure d shows the TRPL spectra of the perovskite film wo/w TPFPB passivation.…”
Section: Resultsmentioning
confidence: 99%