Surface Passivation of In0.52Al0.48As Using (NH4)2Sx and P2S5/(NH4)2S

Interfacial X‐ray photospectrometry study of In 0.53 Ga 0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices

“…In this study, the effect of rapid thermal annealing (RTA) is neglected, since the annealing would regrow certain oxides at the interface. For example, As–S bonds start to disappear when the temperature attains 300°C, and at this point the As oxides are likely to be formed [29]. However, Ga–S is really stable at high temperature and can stand up to 500°C [23].…”