Surface passivation of GaAs(001) by sulfur: ab initio studies

Hirsch, G.; Krüger, Peter; Pollmann, J.

doi:10.1016/s0039-6028(97)01057-1

Cited by 18 publications

(17 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, a simple substitution of As by S in a 1 Â 1 unit cell as shown in Fig. 116,117 The lowest energy structure is found to be that in Fig. Electron counting shows that E F lies in the valence band, as direct calculation by Shiraishi found.…”

Section: Examplesmentioning

confidence: 73%

Passivation of interfacial defects at III-V oxide interfaces

Lin

Robertson

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Articles you may be interested inDefect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor devicesThe electronic structure of gap states has been calculated in order to assign the interface states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As dangling bonds can give rise to gap states. The difficulty of passivating interface gap states in III-V oxide interfaces is attributed to an auto-compensation process of defect creation which is activated when an electron counting rule is not satisfied. It is pointed out that oxide deposition needs to avoid burying As dimer states from the free surface, and to avoid sub-surface oxidation during growth or annealing, in order to avoid defect states at the interface or in the subsurface semiconductor.

show abstract

Section: Examplesmentioning

confidence: 73%

Passivation of interfacial defects at III-V oxide interfaces

Lin

Robertson

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…23 The Sn4d peak was recorded for the final SnPc film and is largely made up of a single doublet corresponding to the Sn 2þ ion within the SnPc molecule. There is a smaller additional component at higher binding energy corresponding to higher oxidation states; this component is not significant in this case, but can be prominent when probing with higher intensity radiation.…”

Section: A Real-time Photoelectron Spectroscopymentioning

confidence: 99%

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

Evans¹,

Vearey-Roberts²,

Roberts³

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Evans, D. A., Vearey-Roberts, A. R., Roberts, O. R., Williams, G. T., Cooil, S. P., Langstaff, D. P., Cabailh, G., McGovern, I. T., Goss, J. P. (2013). Transport and optical gaps and energy band alignment at organic-inorganic interfaces. Journal of Applied Physics, 114 (12), [123701]The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.publishersversionPeer reviewe

show abstract

“…This results in a surface that is inert to oxidation 14 and that has no surface states inside the GaAs band gap. 15 By applying a positive sample bias ͑the tip is virtually grounded in our circuitry͒, electrons can be injected into the structure, and above a certain threshold luminescence can be observed. Figure 3 displays the measured STL spectrum of the QW at room temperature, 77 K, and 4.2 K. Clearly visible is the well-known blueshift with decreasing temperature.…”

Section: CMmentioning

confidence: 99%

Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields

Kemerink

Gerritsen

Hermsen

et al. 2001

Review of Scientific Instruments

View full text Add to dashboard Cite

General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We have designed and built a low-temperature ͑1.3-4.2 K͒ scanning-tunneling microscope which is capable of collecting light that is generated in the tunneling region. Light collection is done by means of two fibers whose cleaved front is in close proximity (Ϸ1 mm͒ to the tunneling region. The whole system can be operated in high magnetic fields ͑11 T͒ without loss of optical signal strength. As a demonstration, we measured the electroluminescence spectra of an InGaAs quantum well at various temperatures. At 4.2 K, we found an electron-to-photon conversion factor that is three orders of magnitude higher than at room temperature.

show abstract

Surface passivation of GaAs(001) by sulfur: ab initio studies

Cited by 18 publications

References 22 publications

Passivation of interfacial defects at III-V oxide interfaces

Passivation of interfacial defects at III-V oxide interfaces

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields

Contact Info

Product

Resources

About