2015
DOI: 10.1007/s11664-015-4140-7
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Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc

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Cited by 1 publication
(1 citation statement)
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“…". Experiments with doping the GaAs semiconductor are presented in: [153] (Mo-doped GaAs on glass substrates), [154] (Sn-doped GaAs on glass substrates), [155] (Zn-doped GaAs on glass substrates), [156,157] (Si-doped GaAs on glass), [158] (C-doped GaAs on glass), [159] (B-doped GaAs on glass), [160] (In-doped GaAs on glass), [161] (Geand Mo-Ge-doped GaAs on glass), [162,163] (Co-doped GaAs on glass), [135] (Mg-doped GaAs on glass), [164] (Pb-doped GaAs on glass).…”
Section: Gallium-based Materialsmentioning
confidence: 99%
“…". Experiments with doping the GaAs semiconductor are presented in: [153] (Mo-doped GaAs on glass substrates), [154] (Sn-doped GaAs on glass substrates), [155] (Zn-doped GaAs on glass substrates), [156,157] (Si-doped GaAs on glass), [158] (C-doped GaAs on glass), [159] (B-doped GaAs on glass), [160] (In-doped GaAs on glass), [161] (Geand Mo-Ge-doped GaAs on glass), [162,163] (Co-doped GaAs on glass), [135] (Mg-doped GaAs on glass), [164] (Pb-doped GaAs on glass).…”
Section: Gallium-based Materialsmentioning
confidence: 99%