Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Zhou, Xiaorun; Lü, Taiping; Zhu, Yicheng; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Yang, Yongzhen; Chen, Yongkang; Xu, Bingshe

doi:10.1186/s11671-017-2115-8

Cited by 15 publications

(5 citation statements)

References 51 publications

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“…When the hydrogen flow rate is small (34.5 sccm), LT-GaN cap layer can protect most of the In atom in the quantum wells. As the hydrogen flow rate increases, the enhanced diffusion of Ga atoms plays a dominant role, which is beneficial in enhancing the 2dimensional growth and suppresses the formation of new pits especially for small pits that begin to grow in last few quantum wells but has little effect on large V-pits that have already formed before MQWs [19], [20]. Moreover, the hydrogen remove the In-rich clusters from the MQWs, therefor reducing stress accumulation may also played a significant role [12].…”

Section: Resultsmentioning

confidence: 99%

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Liu,

Zhang,

Zhang

et al. 2024

IEEE Photonics J.

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In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

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Section: Resultsmentioning

confidence: 99%

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Liu,

Zhang,

Zhang

et al. 2024

IEEE Photonics J.

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“…This is associated to the supply of TMIn during the QB growth that increased the hydrogen presence. As described in Zhou et al [26], it can be proposed that the hydrogen can etch parts of the layers of the MQW (most likely QB) and hence, shrinking the overall period of the MQW. Etching of GaN and InGaN by hydrogen has been widely reported in many works, e.g.…”

Section: Resultsmentioning

confidence: 99%

Growth modification via indium surfactant for InGaN/GaN green LED

Taib¹,

Ahmad²,

Alias³

et al. 2023

Semicond. Sci. Technol.

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In this work, indium (In) was introduced as a surfactant during growth of high temperature GaN quantum barriers (QBs) and GaN interlayer of InGaN/GaN green LEDs. A reference LED grown without In-surfactant was also included for comparison. Results suggested that the LED growth was improved by introducing the In-surfactant, especially during the growth of the GaN interlayer. The In-surfactant improved the morphology of the interlayer, hence allowed it to serve as a good surface growth for the LED. Moreover, the LED showed the lowest FWHM of each XRD satellite peak when the In-surfactant was introduced in the GaN interlayer, suggesting an effective way to improve the multi-quantum wells (MQWs). The introduction of the In-surfactant in the GaN interlayer and GaN QBs growths shifted the emission wavelength of the corresponding LEDs towards red (λemission = 534 nm) with respect to the reference LED where λemission = 526 nm. Furthermore, the In-surfactant introduction reduced the forward voltage, Vf of the corresponding LEDs down to 4.56 V, compared to the reference LED with Vf of 5.33 V. It also allowed the LEDs to show faster carrier decay lifetime, and hence higher radiative recombination, particularly when it was introduced in the GaN interlayer growth.

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“…C, D: P1 < 110 nm and P2 > 210 nm), where the smaller sized pinholes dominate in sample S1 in Figure (C), whereas the surface of S2 exhibits more pinholes of larger size in Figure (D). These defects have been the subject of reports (Zhou et al ., ), and are known to first be correlated to the threading dislocations, to have a size that increases with the number of InGaN/GaN quantum wells, and to generate independently of the threading dislocations when the indium composition is increased by lowering the growth temperature below ∼750°C (Johnson et al ., ). For S1 and S2, the growth temperature of the QWs is above 750°C; therefore, this difference in the density of large pinholes may probably be related to the difference of the photoluminescence emission of both samples and the slightly larger growth time (90 s) for S2, although it was deposited at 780°C where the layer quality is expected to be more optimized.…”

Section: Resultsmentioning

confidence: 99%

The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

Chery

Ngo

Chauvat

et al. 2017

Journal of Microscopy

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SummaryIn this work, we analyse the microstructure and local chemical composition of green-emitting In x Ga 1-x N/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.

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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Cited by 15 publications

References 51 publications

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Growth modification via indium surfactant for InGaN/GaN green LED

The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

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