The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

Chery, Nicolas; Ngo, Thi Huong; Chauvat, Marie-Pierre; Damilano, B.; Courville, Aimeric; Mierry, P. de; Grieb, Tim; Mehrtens, Thorsten; Krause, Florian; Müller‐Caspary, Knut; Schowalter, Marco; Gil, Bernard; Rosenauer, Andreas; Ruterana, P.

doi:10.1111/jmi.12657

Cited by 4 publications

(2 citation statements)

References 36 publications

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“…In semiconductor materials, quantifying the composition with large spatial resolution is needed to correlate material band structure and epitaxial growth conditions, which eventually assists the extrapolation of optimum device design parameters. Several direct and indirect analyzing techniques have been used in this regard such as-photoluminescence (PL) [18,19], energy dispersive spectroscopy (EDS) [20] or electron energy loss spectroscopy (EELS) [21,22]. HAADF-STEM can also be used with this purpose, although the quantification is not straightforward as the HAADF-STEM signal contains both composition and specimen thickness induced information [23,24].…”

Section: Introductionmentioning

confidence: 99%

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

et al. 2018

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The qHAADF method allows the quantification of the composition at atomic column resolution in semiconductor materials by comparing the HAADF-STEM intensities between a region of interest to a region of the material of known composition. However, the application of this qHAADF approach requires both regions to be differentiable and included in the same micrograph at close proximity. This limits the application of this approach to certain materials and magnifications where this requirement is fulfilled. In this work, we extend the qHAADF method to analyses where the reference region is imaged in a separate micrograph. The validity of this modified method is proved by comparison to the original qHAADF approach using HAADF-STEM simulated images of the semiconductor heterostructure InSb/InAs. Additionally, the methods are applied successfully to experimental images both of a simple InSb/InAs interface and of a complex InSb/GaSb heterostructure, justifying the significance of the modified method over the original method.

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Section: Introductionmentioning

confidence: 99%

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

et al. 2018

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“…Efficient blue and green emitting lasers and light emitting diodes (LEDs) have been achieved for many years [1][2][3] . However, InGaN must be grown at relatively low temperature which results in poor crystalline quality when the InGaN/GaN quantum wells (QWs) reach high In composition (> 20%) [4][5][6][7] . This hinders the development of efficient red emitting diodes.…”

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confidence: 99%

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Avit

Robin

Liao

et al. 2021

Sci Rep

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GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A systematic study of the emission of the NRds by time-resolved luminescence (TR-PL) and power dependence PL shows a diameter-controlled luminescence without significant degradation of the recombination rate thanks to the diameter-controlled strain tuning and QSCE. A blueshift up to 0.26 eV from 2.28 to 2.54 eV (543 nm to 488 nm) is observed for 3.2 nm thick InGaN/GaN QWs with an In composition of 19% when the NRds radius is reduced from 650 to 80 nm. The results are consistent with a 1-D based strain relaxation model. By combining state of the art knowledge of c-axis growth and the strong strain relieving capability of NRds, this process enables multiple and independent single-color emission from a single uniform InGaN/GaN MQWs layer in a single patterning step, then solving color mixing issue in InGaN based nanorods LED devices.

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Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

Maidaniuk

Kuchuk

et al. 2020

Materials & Design

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The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

Cited by 4 publications

References 36 publications

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

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