Abstract:The effects of surface morphology on polarization switching in thin ferroelectric films are investigated using a real-space, time-dependent Ginzburg-Landau model that incorporates electrostatic interactions. We consider a two-dimensional uni-axial ferroelectric film with a thickness that varies sinusoidally. Polarization switching, starting from a single domain remnant state, is simulated for several surface modulation amplitudes and wavelengths. We demonstrate that surface heterogeneities produce inhomogeneit… Show more
“…3c,d) which indicate that the height variation of the BFO/SRO film is considerably smaller than that for the BFO/LMSO film. Since domain wall pinning is more likely to occur for the film with larger surface roughness3839, these topography images suggest that the BFO/LSMO film has a higher density of stronger pinning sites.…”
Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance.
“…3c,d) which indicate that the height variation of the BFO/SRO film is considerably smaller than that for the BFO/LMSO film. Since domain wall pinning is more likely to occur for the film with larger surface roughness3839, these topography images suggest that the BFO/LSMO film has a higher density of stronger pinning sites.…”
Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance.
“…When a potential difference is applied across such films, the nonplanar surface morphology results in an inhomogeneous distribution of the electric field within the material. Recently, it has been shown that such electric field inhomogeneity can significantly reduce the applied electric field required to initiate polarization switching process in ferroelectric thin films . In this work, we investigate the influence of such inhomogeneous electric fields on the piezoresponse of such films using experimental measurements, finite element modeling, and phase field simulations.…”
Section: Piezoelectric Response Resultsmentioning
confidence: 99%
“…The phase field method has emerged as a powerful technique to simulate ferroelectric domains and polarization switching . Recently, this method was used to simulate the polarization switching behavior in thin films with a nonplanar morphology . We use this framework here to understand the enhancement of piezoresponse due to the nonplanar surface.…”
Nanostructured piezoelectric and ferroelectric thin films are being increasingly used in sensing and actuating microdevices. In this work, we report the experimental discovery of localized electric field enhancement in nanocolumnar piezoelectric thin films and its significant impact on piezoresponse. The magnitude of electric field enhancement is associated with nonflat surface morphologies and is in agreement with theoretical and finite element models. The influence of this surface morphology induced enhancement on piezoresponse is demonstrated using phase field simulations, which also illustrates surface morphology induced strain enhancement. The observed enhancement can be effectively harnessed to improve the sensitivity of related piezoelectric thin film applications.
“…This barrier is reduced to ~0.35 eV once the surface contains steps. The surface roughness effectively reduces the barriers for domain nucleation at free surfaces driven by external electric fields, as that shown in ferroelectrics 30 . We also calculate the barrier for kink propagation inside twin boundaries.…”
Electric switching of non-polar bulk crystals is shown to occur when domain walls are polar in ferroelastic materials and when rough surfaces with steps on an atomic scale promote domain switching. All domains emerging from surface nuclei possess polar domain walls. The progression of domains is then driven by the interaction of the electric field with the polarity of domain boundaries. In contrast, smooth surfaces with higher activation barriers prohibit effective domain nucleation. We demonstrate the existence of an electrically driven ferroelectric hysteresis loop in a non-ferroelectric, ferroelastic bulk material.
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