Surface morphology control of the SiC (0001) substrate during the graphene growth

Lebedev, S. P.; Amel’chuk, D. G.; Eliseyev, I. A.; Barash, I. S.; Dementev, P. A.; Zubov, A. V.; Лебедев, А. А.

doi:10.1080/1536383x.2019.1697688

Cited by 5 publications

(7 citation statements)

References 9 publications

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“…As was shown in one of our previous works [13], the geometric dimensions of BLG inclusions are related to the surface morphology, which is a set of terraces separated by steps. It was also shown that the parameters of the reconstructed surface (the width of the terraces and the height of the steps) depend on the heating conditions of the SiC substrate.…”

Section: Resultsmentioning

confidence: 67%

Single-Bilayer Graphene Test Structures for Kelvin Probe Microscopy

Lebedev

Eliseyev

Dunaevskiy

et al. 2023

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A new technique for determining the point spread function, which is required for measuring the surface potential using Kelvin probe microscopy (KPM), is presented. The method involves using a silicon carbide substrate coated with single-layer and bilayer graphene as a test structure and obtaining KPM potential profiles in different directions on the surface. This makes it possible to determine the KPM point spread function, which can be used to perform deconvolution and accurately recover the surface potential.

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Section: Resultsmentioning

confidence: 67%

Single-Bilayer Graphene Test Structures for Kelvin Probe Microscopy

Lebedev

Eliseyev

Dunaevskiy

et al. 2023

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“…A graphene device covering the surface step has a much higher resistance than the one on the terrace [ 41 ]. Mammadov et al [ 42 ] and Lebedev et al [ 43 ], using Kelvin-probe force microscopy, showed that the position of multilayer graphene, whose potential is higher compared to the monolayer graphene, corresponds to the borders of the terraces, while monolayer graphene covers the terraces.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, by controlling the heating rate, one can suppress the step-bunching process [ 45 , 46 ]. Lebedev et al [ 43 ], using a heating rate of ~250 °C/min, obtained a homogeneous monolayer of graphene (with a minimum number of double-layer inclusions) on surface steps up to about several nanometers.…”

Section: Resultsmentioning

confidence: 99%

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

et al. 2022

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The synthesis of graphene by the graphitization of SiC surface has been driven by a need to develop a way to produce graphene in large quantities. With the increased use of thermal treatments of commercial SiC substrates, a comprehension of the surface restructuring due to the formation of a terrace-stepped nanorelief is becoming a pressing challenge. The aim of this paper is to evaluate the utility of X-ray reflectometry and grazing-incidence off-specular scattering for a non-destructive estimate of depth-graded and lateral inhomogeneities on SiC wafers annealed in a vacuum at a temperature of 1400–1500 °C. It is shown that the grazing-incidence X-ray method is a powerful tool for the assessment of statistical parameters, such as effective roughness height, average terrace period and dispersion. Moreover, these methods are advantageous to local probe techniques because a broad range of spatial frequencies allows for faster inspection of the whole surface area. We have found that power spectral density functions and in-depth density profiles manifest themselves differently between the probing directions along and across a terrace edge. Finally, the X-ray scattering data demonstrate quantitative agreement with the results of atomic force microscopy.

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“…Scientists have been focused on the preparation mechanism and application of near-free EG on SiC. The surface morphology of graphene/SiC can be well controlled through appropriate heating rate [103]. It is reported that the most preferable heating rate of ∼250 • C min −1 can result in the most homogeneous monolayer graphene on SiC substrate [103].…”

Section: Summary and Future Developmentsmentioning

confidence: 99%

“…The surface morphology of graphene/SiC can be well controlled through appropriate heating rate [103]. It is reported that the most preferable heating rate of ∼250 • C min −1 can result in the most homogeneous monolayer graphene on SiC substrate [103]. The group of H. W. Schumacher reported the preparation of uniform EG with large-area and near-free properties through gas shielding atmosphere, which is important for the formation of SiC buffer layer and the growth of graphene [43].…”

Section: Summary and Future Developmentsmentioning

confidence: 99%

The growth of epitaxial graphene on SiC and its metal intercalation: a review

Yang,

Ma,

Bian

et al. 2024

J. Phys.: Condens. Matter

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High-quality epitaxial graphene (EG) on SiC is crucial to high-performance electronic devices due to the good compatibility with Si-based semiconductor technology. Metal intercalation has been considered as a basic technology to modify EG on SiC. In the past ten years, there have been extensive research activities on the structural evolution during EG fabrication, characterization of the atomic structure and electronic states of EG, optimization of the fabrication process, as well as modification of EG by metal intercalation. In this perspective, the developments and breakthroughs in recent years are summarized and future expectations are discussed. A good understanding of the growth mechanism of EG and subsequent metal intercalation effects is fundamentally important.

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Surface morphology control of the SiC (0001) substrate during the graphene growth

Cited by 5 publications

References 9 publications

Single-Bilayer Graphene Test Structures for Kelvin Probe Microscopy

Single-Bilayer Graphene Test Structures for Kelvin Probe Microscopy

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

The growth of epitaxial graphene on SiC and its metal intercalation: a review

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