2021
DOI: 10.1007/s11433-021-1804-7
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Surface morphology and electronic structure in stoichiometric superconductor CaKFe4As4 probed by scanning tunneling microscopy/spectroscopy

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Cited by 11 publications
(3 citation statements)
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“…The dark area in the upper right corner is the exposed SrTiO 3 substrate. The apparent height of the step between FeSe and SrTiO 3 is ∼ 660 pm at a V s of 1 V, which is slightly larger than the out-of-plane lattice constant of FeSe (550 pm) due to the varied density of states [34]. This edge is along the (11) direction, as judged from the atomically resolved Se lattice structure shown in the inset image.…”
Section: Resultsmentioning
confidence: 90%
“…The dark area in the upper right corner is the exposed SrTiO 3 substrate. The apparent height of the step between FeSe and SrTiO 3 is ∼ 660 pm at a V s of 1 V, which is slightly larger than the out-of-plane lattice constant of FeSe (550 pm) due to the varied density of states [34]. This edge is along the (11) direction, as judged from the atomically resolved Se lattice structure shown in the inset image.…”
Section: Resultsmentioning
confidence: 90%
“…The dark area in the upper right corner is the exposed SrTiO3 substrate. The apparent height of the step between FeSe and SrTiO3 is ~ 660 pm at a sample bias (Vs) of 1 V, which is slightly larger than the out-of-plane lattice constant of FeSe (550 pm) due to the varied density of states 34 . This edge is along the (11) direction, as judged from the atomically resolved Se lattice structure shown in the inset image.…”
Section: Main Textmentioning
confidence: 92%
“…[2,9, [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] . 尤其, 近十几年来随着铁基超 导体的发现及各种实验技术的发展 [31][32][33][34][35][36][37] , 为铜氧化物 也会提高超导转变温度. 铜氧化物和铁基超导体的最 高转变温度都是利用这一策略成功实现的 [31,43,44] .…”
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