Surface modification of polymers by plasma-assisted atomic layer deposition

Kääriäinen, Tommi; Lehti, S.; Kääriäinen, Marja-Leena; Cameron, D.C.

doi:10.1016/j.surfcoat.2011.03.094

Cited by 22 publications

(11 citation statements)

References 39 publications

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“…x [561,683,[735][736][737][738][739][740][741][742][743]; [384,646,744]; [384,646,651,741,[745][746][747][748][749][750][751][752][753][754][755][756][757][758][759][760][761];…”

Section: Alkoxidesunclassified

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

138

116

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Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cov er the lat est tr ends in t he research f ield, both the var iously constr ucted TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

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“…x [561,683,[735][736][737][738][739][740][741][742][743]; [384,646,744]; [384,646,651,741,[745][746][747][748][749][750][751][752][753][754][755][756][757][758][759][760][761];…”

Section: Alkoxidesunclassified

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

138

116

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“…Each atomic layer formed in the sequential process is a result of saturated surface controlled chemical reactions [4-6]. In plasma-assisted atomic layer deposition (PA-ALD), additional energy for the chemical reaction is provided by applying plasmas at an appropriate time interval during the reaction cycle, in which the plasmas are used to produce radicals by gas dissociation [4,7,8]. It brings the advantages of improving the reaction rates, the process efficiency, the fragmentation of precursor molecules, and the removal of product molecules [4,9].…”

Section: Introductionmentioning

confidence: 99%

“…In plasma-assisted atomic layer deposition (PA-ALD), additional energy for the chemical reaction is provided by applying plasmas at an appropriate time interval during the reaction cycle, in which the plasmas are used to produce radicals by gas dissociation [4,7,8]. It brings the advantages of improving the reaction rates, the process efficiency, the fragmentation of precursor molecules, and the removal of product molecules [4,9]. The reactive surface groups play an important role for the initial growth and nucleation of Al 2 O 3 thin film in atomic layer deposition by reacting with the precursor molecules [10-13].…”

Section: Introductionmentioning

confidence: 99%

Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition

et al. 2013

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In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.

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“…TDMAT has been used earlier for TiO 2 ALD process development with H 2 O, 16 [16][17][18][19][20][21][22][23] The TMA and O 3 process has been studied quite extensively, 24 and it has also been used previously in ALD for deposition on polymer substrates. 8 In this study, O 3 was generated from O 2 (99.999%, AGA) in an ozone generator (Wedeco Ozomatic 4 HC) and injected into the reactor at a nominal ozone concentration of around 90 g m À3 as informed by the generator manufacturer.…”

Section: Methodsmentioning

confidence: 99%

Nanoscratch testing of atomic layer deposition and magnetron sputtered TiO2 and Al2O3 coatings on polymeric substrates

Kääriäinen

Kelly

Cameron

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of oxygen incorporation on the structure and elasticity of Ti-Al-O-N coatings synthesized by cathodic arc and high power pulsed magnetron sputtering J. Appl. Phys. 116, 093515 (2014); 10.1063/1.4894776 Colored hard coatings with AlN-TiN multilayer structures J. Vac. Sci. Technol. A 32, 02B106 (2014); 10.1116/1.4838895 On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition J. Vac. Sci. Technol. A 32, 01A116 (2014); 10.1116/1.4842655 Adhesion testing of atomic layer deposited TiO2 on glass substrate by the use of embedded SiO2 microspheres J. Vac. Sci. Technol. A 32, 01A102 (2014); 10.1116/1.4827197 Plasma-assisted atomic layer deposition of TiN / Al 2 O 3 stacks for metal-oxide-semiconductor capacitor applications

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Surface modification of polymers by plasma-assisted atomic layer deposition

Cited by 22 publications

References 39 publications

Titanium dioxide thin films by atomic layer deposition: a review

Titanium dioxide thin films by atomic layer deposition: a review

Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition

Nanoscratch testing of atomic layer deposition and magnetron sputtered TiO2 and Al2O3 coatings on polymeric substrates

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