Surface Modification of Base Materials for  TEOS  /  O 3 Atmospheric Pressure Chemical Vapor Deposition

Fujino, K.; Nishimoto, Yuko; Tokumasu, N.; Maeda, Kazuo

doi:10.1149/1.2069478

Cited by 25 publications

(15 citation statements)

References 4 publications

(7 reference statements)

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“…Information about thermally-activated TEOS and ozone interaction at low temperatures appeared in the end of 1980 th . Silicon dioxide thin film deposition was performed either at atmospheric pressure chemical vapor deposition (APCVD) conditions, [4][5][6][7][8][9] or under subatmospheric pressure (SACVD) conditions. [10][11][12][13][14] Ozone with concentration more than about 1 weight % in oxygen was found to accelerate the film DR significantly.…”

mentioning

confidence: 99%

Evaluation of Low Temperature TEOS-Ozone Silicon Dioxide Thin Film CVD under Sub-Atmospheric Pressure Using Consecutively Pulsed Reactant Injection

Vasilyev

2014

ECS J. Solid State Sci. Technol.

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New approach for sub-atmospheric pressure silicon dioxide thin film deposition process at consecutively pulsed injection of tetraethylorthosilicate (TEOS) and ozone is presented. The study was performed with DCVD Centura D×Z tool. Deposition rates (DR) were as low as 0.03-0.1 nm/cycle and similar to those at atomic-layer deposition regime of thin film growth. The effects of deposition temperature, deposition process pressures and total reactant flows, ozone concentration, spacing, process cycle duration and total cycle numbers are presented. Deposition features were similar to those observed using continuous reactant delivery to the process chamber. DR values were found to depend strongly on ozone concentration and the surface of material used for CVD known as so-called "surface sensitivity" effect.Silicon dioxide thin film deposition on silicon using tetraethylorthosilicate (TEOS) was described for the first time in. 1 It was shown that TEOS is able to decompose in argon and hydrogen ambient at temperatures above 500 • C producing SiO 2 films with acceptable deposition rate (DR). However, TEOS was found to react with oxygen at temperatures as low as 300 • C with very low DR. Due to this, the only middle-temperature TEOS pyrolysis reactions 2 or low-temperature plasma-enhanced oxidation 3 processes are used in Integrated Circuit (IC) technology and production for a long time.Information about thermally-activated TEOS and ozone interaction at low temperatures appeared in the end of 1980 th . Silicon dioxide thin film deposition was performed either at atmospheric pressure chemical vapor deposition (APCVD) conditions, 4-9 or under subatmospheric pressure (SACVD) conditions. 10-14 Ozone with concentration more than about 1 weight % in oxygen was found to accelerate the film DR significantly. This made TEOS-ozone CVD process applicable for new generations of IC devices, basically due to urgent gap-filling needs of sub-quarter micron IC technology. A few lowtemperature thermally-activated IC production tools and CVD processes for thin films of silicon dioxide, phosphosilicate and borophosphosilicate glasses were studied and developed in a mid of 1990 th , 15-20 see also summary in the author's summary 21 and a monograph. 22 Unique features of TEOS-ozone CVD processes for silicon dioxide (frequently called also "undoped silicate glass", USG) were described in details in. 4-14 Among them the following three process features were most important. The first one was the effect of DR acceleration along with ozone concentration increase in between up to 1 weight %. A "surface sensitivity" effect at high ozone concentrations comes second. This effect is known as 10-30% differences in SiO 2 DR values and the film properties for the films grown on different surface types like silicon, silicon dioxide and silicon nitride. Finally, "flowlike" thin film deposition on stepped IC device structures was found. The latter feature allowed gap-filling of complicated IC device structures and solving some device planarization issues. To exp...

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mentioning

confidence: 99%

Evaluation of Low Temperature TEOS-Ozone Silicon Dioxide Thin Film CVD under Sub-Atmospheric Pressure Using Consecutively Pulsed Reactant Injection

Vasilyev

2014

ECS J. Solid State Sci. Technol.

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“…Low-temperature deposition of SiO 2 (<500ЊC) is possible with CVD, which has been used for intermetal dielectric (IMD) and interlayer dielectric (ILD). [11][12][13] Low-temperature deposition is also required in the thin-film-transistor liquid crystal display (TFT-LCD) process to enable utilization of low-cost glass substrates. So far, hydrogenated amorphous silicon (a-Si:H) TFTs with silicon nitride as a gate insulator have been used for LCDs, because a-Si for active layers can be easily deposited on large-area, inexpensive glass substrates at temperatures below 350ЊC.…”

mentioning

confidence: 99%

Electrical Properties of Bulk Silicon Dioxide and SiO[sub 2]/Si Interface Formed by Tetraethylorthosilicate-Ozone Chemical Vapor Deposition

Kim¹,

Rhee

2000

J. Electrochem. Soc.

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Thermal oxidation and chemical vapor deposition (CVD) are two major methods to form silicon oxide films. Many researchers 1-10 have studied to characterize and understand the bulk silicon oxide and the SiO 2 /Si interface. Low-temperature deposition of SiO 2 (<500ЊC) is possible with CVD, which has been used for intermetal dielectric (IMD) and interlayer dielectric (ILD). 11-13 Low-temperature deposition is also required in the thin-film-transistor liquid crystal display (TFT-LCD) process to enable utilization of low-cost glass substrates. So far, hydrogenated amorphous silicon (a-Si:H) TFTs with silicon nitride as a gate insulator have been used for LCDs, because a-Si for active layers can be easily deposited on large-area, inexpensive glass substrates at temperatures below 350ЊC. 14 On the other hand, the electron mobility in polysilicon is higher than in a-Si, and one of the advantages of poly-Si TFTs is their potential for integrated-array driver circuits, which can significantly reduce the number of interconnections from the pixel TFT to the peripheral circuit. The development of a low-temperature process for the deposition of poly-Si and gate insulator is required. In this case, silicon oxide is preferred as a gate insulator, since poly-Si has been known to have good interface properties with silicon oxide. 15 So far, in silicon oxide CVD processes, a silane (SiH 4 ) chemistry, for example, SiH 4 /N 2 O or SiH 4 /O 2 , has been used. 16 The study for the interface characterization has been focused on the silane chemistry CVD process. 17-20 Silicon oxide by tetraethylorthosilicate (TEOS) chemistry is believed to be a candidate for the gate oxide, together with that by silane chemistry. Although the TEOS molecule has ethoxy groups (OC 2 H 5 ), it has been known that carbon impurities are not a problem. TEOS processes have been widely studied with various methods such as plasma-enhanced chemical vapor deposition (PECVD), electron cyclotron resonance (ECR) plasma CVD, and ozone-based CVD. 21-24 Silicon oxide films by TEOS/O 3 CVD processes have especially been studied by many researchers and have mainly been used for IMD and ILD due to their good step coverage. However, the interface characterization for gate oxides has rarely been studied yet.In this study, electrical properties of the bulk silicon oxide and the SiO 2 /Si interface by TEOS/O 3 CVD was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. Using the Terman method, interface properties such as interface trap density distribution (D it ) were studied as functions of process parameters such as deposition temperature and TEOS/O 3 ratio. ExperimentalTEOS (99.999%) vapor was supplied to the reactor by flowing nitrogen (99.999%) through a TEOS bubbler which was heated at 65ЊC. N 2 dilute gas was used to maintain the total gas flow rate constant in the reactor. Ozone flow rate was controlled by the ozone generator power with constant O 2 (99.999%) gas flow rate. TEOS carried by N 2 gas was mixed with ozone immediately prio...

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“…These are surface sensitivity (different deposition rates on silicon and on silicon dioxide or silicon nitride surfaces), flow-like type of the deposition on the IC surface topography (step coverage more than 100%), high film porosity and film shrinkage, high etch rate, high surface roughness, etc. [32][33][34][35][36]39,40 Usually TEOS-ozone silicon dioxide CVD processes are performed at atmospheric pressure (APCVD), or sub-atmospheric pressure (SACVD, a few hundreds of Torrs are used 3,29,36 ). It was found that in a wide range of CVD process conditions, ozonebased silicon dioxide films revealed stable deposition rate of about 0.1-0.2 μm min −1 .…”

Section: Summary Of Stress Data For Ozone-based Thin Filmsmentioning

confidence: 99%

Review—Mechanical Stress in Chemically Vapor Phase Deposited Boron- and Phosphorus-Contained Silicate Glass Thin Films: A Review

Vasilyev

Kittilsland

2020

ECS J. Solid State Sci. Technol.

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This article provides an overview of the published mechanical stress data for boron-and phosphorus-contained silicate glass films deposited by a variety of chemically vapor deposited (CVD) techniques, i.e. atmospheric and sub-atmospheric pressure (APCVD, SACVD), low pressure, plasma-enhanced (LPCVD, PECVD). The emphasis is done on borophosphosilicate glass films (BPSG) dedicated for the use in micro-electro-mechanical system (MEMS) and micro-opto-electro-mechanical system (MOEMS) technologies as a material with significantly higher film thickness as compared with its traditional use in microelectronics technology as a flow-able planarized interlayer dielectric. The article covers stress features of as-deposited and thermally annealed films with the boron and phosphorus concentration range in between about 1-12 wt%. Phosphorus is detected as a main film component responsible for stress type (tensile or compressive) and its particular values. Film deposition techniques strongly affect the film stress at low phosphorus content in the films, providing either tensile (APCVD, SACVD), or compressive (LPCVD, PECVD) stress types. These effects explained with differences in CVD kinetics and hydrogen-contained CVD reaction by-products formation.

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Surface Modification of Base Materials for TEOS / O 3 Atmospheric Pressure Chemical Vapor Deposition

Cited by 25 publications

References 4 publications

Evaluation of Low Temperature TEOS-Ozone Silicon Dioxide Thin Film CVD under Sub-Atmospheric Pressure Using Consecutively Pulsed Reactant Injection

Evaluation of Low Temperature TEOS-Ozone Silicon Dioxide Thin Film CVD under Sub-Atmospheric Pressure Using Consecutively Pulsed Reactant Injection

Electrical Properties of Bulk Silicon Dioxide and SiO[sub 2]/Si Interface Formed by Tetraethylorthosilicate-Ozone Chemical Vapor Deposition

Review—Mechanical Stress in Chemically Vapor Phase Deposited Boron- and Phosphorus-Contained Silicate Glass Thin Films: A Review

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