Surface Modification and Microstructuring of 4H-SiC(0001) by Anodic Oxidation with Sodium Chloride Aqueous Solution

Yang, Xu; Sun, Rongyan; Kawai, Kentaro; Arima, Kenta; Yamamura, Kazuya

doi:10.1021/acsami.8b19557

Cited by 19 publications

(12 citation statements)

References 40 publications

(55 reference statements)

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“…The near hexagonal nanopores are ascribed to SiC single crystal's orientation‐dependent anisotropy. [ 37 ] The cross‐sectional observation of the nanoporous structure in Figure 4e shows a homogeneous nanoporous layer with a very uniform thickness. The etch thickness measures 3.4 µm with an average etching rate of 340 nm min −1 .…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching

Zhan

Liu

et al. 2023

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bio-compatibility, and high resistance to mechanical damage and chemical attack. [1,2] The combination of exceptional intrinsic properties with a high specific surface area and low dimensionality (in the case of SiC membranes) make nanoporous SiC excellent candidates for application in optoelectronic nanodevices. Many studies have reported that nanoporous structures can improve the material's optical, [3] electronic, and oxidation properties. [4,5] Various possible application scenarios for nanoporous structures have been reported in fields like microelectromechanical systems (MEMS), [6] membranes for biomedical applications, [7] chemical sensors, [8] supercapacitors, [9] and photoelectrodes. [10] In recent years, there have been extensive studies on constructing nanostructure SiC, employing robust and efficient techniques with improved controllability. However, the nanostructuring of SiC is very challenging owing to its extremely high chemical inertness and mechanical resistance. Although various fabrication methods have been developed, SiC nanofabrication techniques, which must meet the strict requirements of scalability and efficiency for industrial applications, remain very limited.The nanofabrication techniques for SiC can be broadly classified into two principal approaches, that is, top-down and bottom-up. The most explored bottom-up nanofabrication approach is a direct chemical synthesis for the growth of low-dimension SiC (i.e., 1D or 2D), such as chemical vapor deposition for the growth of SiC nanowires. [11] However, to produce nanostructure SiC from a single crystal wafer, for example, nanoporous SiC, the top-down fabrication approach by nanoscale etching is more effective and robust. Compared with the bottom-up approach, the top-down principle enables a well-ordered nanostructure with high homogeneity. Primary top-down nanofabrication methods include nanolithography using high-energy particles (i.e., photon, ion, electron), [12] dry etching, [13] and wet etching, [14] resulting in high-quality nanostructures for application in electronic devices or MEMS. The semiconductor lithography technique using UV or electron beam is mainly used for high-resolution nanostructure Nanoporous single-crystal silicon carbide (SiC) is widely used in various applications such as protein dialysis, as a catalyst support, and in photoanodes for photoelectrochemical water splitting. However, the fabrication of nano-structured SiC is challenging owing to its extreme chemical and mechanical stability. This study demonstrates a highly-efficient, open-circuit electrolytic plasma-assisted chemical etching (EPACE) method without aggressive fluorine-containing reactants. The EPACE method enables the nano-structuring of SiC via a plasma-enveloped microtool traversing over the target material in an electrolyte bath. Through process design, EPACE readily produces a uniform nanoporous layer on a 4H-SiC wafer in KOH aqueous solution, with adjustable pore diameters in the range 40-130 nm. Plasma diagnosis by optical emission spectrometr...

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Section: Resultsmentioning

confidence: 99%

Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching

Zhan

Liu

et al. 2023

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“…Since 4H–SiC is an anisotropic crystal, it has different oxidation rates in different crystallographic orientations on the same surface. Especially, along the directions of (1000), (0100), and (0010), it has higher oxidation rates, 28 and the small oxidized protuberances generated during the oxidation process are considered to be the result of preferential oxidation on these surfaces. Due to the difference in molar volume between SiO 2 and SiC (the densities of SiC and SiO 2 are 0.079 and 0.044 mol cm −3 , respectively), during oxidation of SiC, expansion pressure is generated in both the thickness direction ( x direction) and the plane direction ( y direction), and the distribution of expansion pressure generated by the oxidized grains is determined by the distribution of oxidation rate of the crystal grains.…”

Section: Resultsmentioning

confidence: 99%

“…With the oxidation reaction going on, the number of oxide protuberances increases, and the surface roughness is greatly affected by the oxidation rate of different parts. 28 From the cross-sectional view of Fig. 4(c) and (d), the oxide's maximum height is 286.23 nm, this is because the oxide protuberances are related to the oxidation sites on the surface, and the roughness increases signicantly at the locations of the oxide protrusions and corresponding to the subsurface damage.…”

Section: Peco Experimentsmentioning

confidence: 94%

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Yin

et al. 2021

RSC Adv.

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“…After the heat treatment, all the samples still inherit the original structure of the raw SiC/C foam. It is ascribed to the high oxidative stability of the SiC coating, which ensures the whole spatial structure stability. , The skeleton of carbon foam is acted as the structure template. After the deposition process, it is wrapped by the SiC coating.…”

Section: Results and Discusionmentioning

confidence: 99%

Microstructure and Microwave Absorption Performance Variation of SiC/C Foam at Different Elevated-Temperature Heat Treatment

Chen

Li³

et al. 2019

ACS Sustainable Chem. Eng.

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The porous structure has been proved to be beneficial to improve the microwave absorption performance. In this article, the SiC coating reinforced carbon foam (SiC/C) was synthesized via the direct pyrolysis of melamine foam and chemical vapor deposition process of SiC coating. Then the wrapping architecture consisting of three-dimensional carbon foam and ultrathin SiC coating was annealed at elevated temperature. The result shows that the anneal temperature does have a big impact on the dielectric property as the real and imaginary permittivities remain at a certain level with the increasing heat treatment temperature and finally drop to a low level until 900 °C. After being heated at 900 °C, the SiC/C foam attains a minimum reflection loss value of −51.58 dB with a matching thickness of 3.60 mm at 8.96 GHz, which is enhanced by 30.88% compared with the raw SiC/C foam. It also possesses an effective bandwidth frequency of 10.84 GHz ranging from 7.16 to 18.00 GHz, which is ascribed to the three-dimensional hollow structure to improve the polarization relaxation and interfacial polarization. The superior microwave absorption performance guarantees the potential application of a promising efficient microwave absorber in the harsh realities.

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Surface Modification and Microstructuring of 4H-SiC(0001) by Anodic Oxidation with Sodium Chloride Aqueous Solution

Cited by 19 publications

References 40 publications

Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching

Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Microstructure and Microwave Absorption Performance Variation of SiC/C Foam at Different Elevated-Temperature Heat Treatment

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