2021
DOI: 10.1039/d1ra04604g
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Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Abstract: Silicon carbide (SiC) surface modification is an essential step in chemical mechanical polishing. For high quality and high efficiency surface modification of SiC, a green and promising surface modification method named plasma electrochemical oxidation (PECO) is proposed.

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Cited by 16 publications
(10 citation statements)
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“… Preoperative Preparation . All patients were intramuscularly injected with pethidine 50 mg before positioning, and appropriate body positions were taken according to the position of the nodule after three-dimensional reconstruction and the surgical approach, and the patients were instructed to keep a relatively static state and a relatively stable breathing range as much as possible [ 16 ]. CT scan is performed to display the location of the target lesion.…”
Section: Methodsmentioning
confidence: 99%
“… Preoperative Preparation . All patients were intramuscularly injected with pethidine 50 mg before positioning, and appropriate body positions were taken according to the position of the nodule after three-dimensional reconstruction and the surgical approach, and the patients were instructed to keep a relatively static state and a relatively stable breathing range as much as possible [ 16 ]. CT scan is performed to display the location of the target lesion.…”
Section: Methodsmentioning
confidence: 99%
“…The possible reaction equations are as follows. [ 40–42 ] SiCbadbreak+ ·O2goodbreak+4·OH SiO2goodbreak+CO2goodbreak+2H2normalO\[ \begin{array}{*{20}{c}}{{\rm{SiC}} + \;\cdot{{\rm{O}}_2} + 4\cdot{\rm{OH}} \to \;{\rm{Si}}{{\rm{O}}_2} + {\rm{C}}{{\rm{O}}_2} + 2{{\rm{H}}_2}{\rm{O}}}\end{array} \] SiCbadbreak+4·OHgoodbreak+4h+ SiO2goodbreak+4H+goodbreak+CO2\[ \begin{array}{*{20}{c}}{{\rm{SiC}} + 4\cdot{\rm{OH}} + 4{{\rm{h}}^ + }\; \to \;{\rm{Si}}{{\rm{O}}_2} + 4{{\rm{H}}^ + } + {\rm{C}}{{\rm{O}}_2} \uparrow }\end{array} \] …”
Section: Resultsmentioning
confidence: 99%
“…The inputs for test set are shown in Table 4. To make the model more inclusive and convinced, Root Mean Square Error (RMSE) and R 2 29,30 are chosen as evaluation indicators and shown in equations ( 9) and (10). It can be deduced that the RMAE is 0.403 and the R 2 is 0.9915 in the test set, which indicates that the model owns high ability to map the relationship in CMP.…”
Section: Experiments Verification and Discussion Of Dnn Modelmentioning
confidence: 99%
“…6,7 During the CMP process, the procedure is so complicated that the empirical model and physical model cannot clarify the process thoroughly. [8][9][10] Due to the above reasons, how to build a model to study the relationship between parameters and surface quality quantitatively and how to optimize the parameters based on the model have always been worth-solving problems in CMP process. As a burgeoning artificial intelligence technology, machine learning methods, such as Support Vector Regression (SVR), Decision Tree (DT), Artificial Neural Network (ANN) can analyze the data quickly, by building a complex relationship between inputs and output(s) parameters.…”
Section: Introductionmentioning
confidence: 99%