Surface induced negative photoconductivity in p-type ZnSe : Bi nanowires and their nano-optoelectronic applications

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors

“…[ 26,27 ] For practical applications, e.g., imaging and optical communication, fast response speed and high sensitivity of the photodetectors are much desirable. [ 28 ] Though photodetectors with remarkable speed and sensitivity have been developed from various 1D nanostructures, such as ZnSe, [ 29 ] CdS, [ 30 ] GaN [ 31 ] nanowires and nanoribbons, the inherent diffi culties of 1D nanostructures in device integration impede their wide applications. In contrast, 2D layered materials offer the great promise of fabricating high-performance photodetectors for large-scale applications.…”

Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

“…Besides the use of appropriate metal electrode, doping has been demonstrated to be an efficient way, which is also a feasible method to tune their optoelectronic properties and further enhance their device performances [25,26]. So far, As and Bi doping have been utilized to enhance the p-type conductivity of the ZnSe nanowires, representing an important achievement in nanomaterials synthesis and offering the opportunities for future nanodevice applications [15,18]. In spite of these progresses, the efficient synthesis of p-type ZnSe nanostructures with reliable and reproducible is much demanded to promote the applications of ZnSe nanostructures in further study.…”

“…They are good candidates for the building blocks of functional nano-devices such as field-effect transistors (FETs), photodetectors (PDs), light-emitting diodes (LEDs) and so on [15][16][17][18][19]. In the past decade, synthesis of ZnSe nanostructures has been intensively studied via various growth methods [20][21][22][23][24].…”

The way to high-performance single nanowire photodetectors: problems and prospects

“…Zhang et al [4] found that when p-type ZnSe:Bi nanowires were exposed to blue light, the photocurrent was smaller than the dark current, which means a negative photoconductivity (NPC). This is attributed to the photodesorption of oxygen molecules.…”

“…Operating Schottky diodes at a reverse bias voltage is conventional. For the p-type ZnSe:Bi NW photodetectors discussed in paragraph 3, Zhang et al [4] used Al (a low work function metal) as one of the electrodes. When applied a reverse bias, these NW photodetectors show positive photoconductivity instead of NPC, indicating that the optical excitation in the Schottky junction area rather than the surface oxygen photodesorption dominates the photocurrent.…”