Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure

Abstract

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Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

“…Gao et al demonstrated that the Cr terminated (001) surface is nearly half-metallic as their one spin channel is metallic and other one is a nearly a semiconductor. 81,82 However, in our case, the spin-up band crosses (at Γ-point) the Fermi level a little which corresponds to weak metallicity. So, such type of material can also be classified as a nearly half-metallic system.…”

“…On the other hand, the metallic nature of the spin-up channel shows that the main contribution at the Fermi level comes from the Cr 3d and C/N 2p orbitals. So our spin-polarized study indicates that Cr@gt-C 3 N 4 is a half-metallic 81,82 system with 100% spin polarization at the Fermi. Gao et al demonstrated that the Cr terminated (001) surface is nearly half-metallic as their one spin channel is metallic and other one is a nearly a semiconductor.…”

“…Thereby, the spin-down channel shows a semiconducting nature, whereas the spin-up channel remains metallic. Thus, Fe@gt-C 3 N 4 is a nearly halfmetallic 81,82 system with 100% spin polarization at the Fermi, where the spin-down electrons can be easily transported through the carbon-nitride framework with the help of hybridization of C/N 2p and Fe 3d orbitals. Furthermore, we find that the FM state is the ground state in Fe@gt-C 3 N 4 , which is more stable by 75.21 and 352.02 meV per unit cell than the NSP and AFM states, respectively.…”

CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance

“…All these parameters are tested to be sufficient to obtain accurate results, and the present method has been successfully used in our previous works on spin transport properties of magnetic heterostructures and MTJs. 36,37 The spin-dependent current is calculated by the Landauer-Buttiker formula:…”

Half-metallic YN2 monolayer: dual spin filtering, dual spin diode and spin Seebeck effects

“…To date, some different classes of HMMs have been predicted theoretically or realized experimentally, 3,4 and some spintronic devices based on HMMs have been designed and found to exhibit high magnetoresistances, spin diode effects, and spin filtering effects. [5][6][7][8] However, the demand of spintronic devices with small-size and high-capacity requires the development of low-dimensional HM materials. Recently, graphene and graphene-like twodimensional materials such as transition-metal dichalcogenides (e.g., MoS 2 ), black phosphorus, silicence/germanene, and III-VI compounds (e.g., GaSe) have been focused on, partly due to their high electron mobility, long spin coherence length, and HM ferromagnetism.…”