2019
DOI: 10.1039/c8ra08107g
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CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance

Abstract: Spin-dependent device density of states in the CrO2/TiO2/CrO2 magnetic tunnel junction.

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Cited by 15 publications
(5 citation statements)
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“…For the past few years, due to the tremendous development of spintronic devices, half-metallic ferromagnets have attracted considerable attention. Half-metallic ferromagnets are materials in which a metallic band crosses the Fermi level for one spin channel, while a band gap exists in the other spin channel. , Therefore, half-metallic ferromagnets should have 100% spin polarization at low temperatures and are an ideal material for use in spintronics equipment.…”
Section: Introductionmentioning
confidence: 99%
“…For the past few years, due to the tremendous development of spintronic devices, half-metallic ferromagnets have attracted considerable attention. Half-metallic ferromagnets are materials in which a metallic band crosses the Fermi level for one spin channel, while a band gap exists in the other spin channel. , Therefore, half-metallic ferromagnets should have 100% spin polarization at low temperatures and are an ideal material for use in spintronics equipment.…”
Section: Introductionmentioning
confidence: 99%
“…32-35. Nevertheless, all of the aforementioned MTJs are constructed using the CrO 2 bulk phase or films in the lateral heterostructure. [27][28][29][30][31][32][33][34][35] With respect to the lateral MTJs, materials with substantially different lattice structures or processing conditions cannot be epitaxially grown together without the generation of interface disorder. It could severely alter their intrinsic properties 36 and thus dramatically affect the TMR properties.…”
Section: Introductionmentioning
confidence: 99%
“…29–31 In the past three years, MoS 2 , TiO 2 , CNT and hydrogenated silicene were adopted as tunnel barriers in the CrO 2 based lateral MTJs, and the TMR ratio was reported to be up to 4.48 × 10 14 % in ref. 32–35.…”
Section: Introductionmentioning
confidence: 99%
“…Among the two different spin channels of half-metallic ferromagnets, one spin channel is metallic, while the other is insulating or a semiconductor [11]. Half-metallic ferromagnets are widely used in spin diodes, spin valves, and spin filters because of their unique electronic structure [12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%