Surface evolution of NaCl-type cubic AlN films on MgO (100) substrates deposited by laser molecular beam epitaxy

Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

“…4e, which is more suitable for the nucleation of GaN. These results are consistent with the Fu et al' results [20]. Therefore the surface morphology of Sample B could not [30].…”

“…Thanks to the splendid lateral mobility on AlN and the decrease of interfacial free energy, it is easy for GaN to laterally grow and to form a relatively flat plane. However, the 30 nm-thick AlN buffer layer in Sample B is grown in three-dimensional mode with a rough interface [20], as shown in Fig. 4d, while the 150 nm-thick AlN buffer layer in Sample C has upgraded to two-dimensional mode with a relatively flat interface [20], as shown in Fig.…”

“…However, the 30 nm-thick AlN buffer layer in Sample B is grown in three-dimensional mode with a rough interface [20], as shown in Fig. 4d, while the 150 nm-thick AlN buffer layer in Sample C has upgraded to two-dimensional mode with a relatively flat interface [20], as shown in Fig. 4e, which is more suitable for the nucleation of GaN.…”

“…Therefore the surface morphology of Sample B could not [30]. In order to further investigation of the in-plane epitaxial relationship, typical φ scans of asymmetric GaN(10-11), AlN(10-11) and Al 2 O 3 (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23) are measured, as shown in Fig. 7.…”

“…On the other hand, the mobility of GaN on AlN is ten times higher than that on sapphire, and the carrier concentration of GaN with AlN buffer is two orders of magnitude lower than that grown on sapphire directly [13]. Compared with the common techniques, such as metal organic chemical vapor deposition (MOCVD) [14], molecular beam epitaxy (MBE) [15] and hydride vapor phase epitaxy (HVPE) [16], pulsed laser deposition (PLD) is more suitable for preparing of high-quality III-nitride films at low temperature [17][18][19][20][21]. The sputtering plasma plume from bulk target generated by pulse laser provides high kinetic and potential energy, which can improve the mobility of the precursor on substrate surface and reduce the growth temperature (300-800 1C) [22].…”