Surface evolution during molecular-beam epitaxy deposition of GaAs

Growth mode transitions induced by hydrogen-assisted MBE on vicinal GaAs(110)

“…2(a -c) shows the oscillations of the RHEED specular beam recorded during the first stages of growth after H-assisted oxide desorption and H-assisted growth in the Ga-and Aslimited regimes. The oscillatory behavior of the specular RHEED beam has been explained in terms of a temporal variation in the surface step density on the growing surface resulting from two-dimensional layer-by-layer deposition of GaAs [13,14].…”

Relevance of surface reconstruction to specular RHEED intensity on GaAs(001)

“…[12][13][14] Furthermore, by using scanning tunneling microscopy ͑STM͒, Sudijono and co-workers directly counted the ''step densities'' after interrupting growth of the ͑001͒ and ͑111͒A surfaces of GaAs at several different deposition coverages, followed by quenching them down to room temperature. [15][16][17] In these experimental studies, quite a good agreement was obtained by using samples on which growth was interrupted when the surfaces were in the steady-state growth mode at high temperatures. However, the definition of a step density used in the kinetic MC calculations [12][13][14] and the counting in the STM images [15][16][17] is actually not the density of steps but that of terrace edges.…”

InGaAs quantum wires grown on (100)InP substrates

“…The stepped surface of the InGaAlAs buffer layer provides the adatoms a migrating path in the step front along the [0 1 1] direction [5,11,12]. Adding Ga to the nanostructure may further increase the adatom diffusion length, and enhance the Qwire formations.…”