2008
DOI: 10.1016/j.physleta.2008.04.013
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Surface effects on photoluminescence of single ZnO nanowires

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Cited by 194 publications
(170 citation statements)
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References 30 publications
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“…Deviation from stoichiometry results in defects associated with zinc or oxygen electric conductivity and DLE intensity increasing in oxygen deficient ZnO nanostructures decreasing NBE to DLE ratio [21][22][23] [21][22][23]. The NBE/DLE ratio of ZnO nanostructures increases with improvement of the stoichiometry [23].…”
Section: Results and Discussonmentioning
confidence: 99%
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“…Deviation from stoichiometry results in defects associated with zinc or oxygen electric conductivity and DLE intensity increasing in oxygen deficient ZnO nanostructures decreasing NBE to DLE ratio [21][22][23] [21][22][23]. The NBE/DLE ratio of ZnO nanostructures increases with improvement of the stoichiometry [23].…”
Section: Results and Discussonmentioning
confidence: 99%
“…The structural, optical and electrical properties of ZnO nanostructures are strongly interrelated [21][22][23]. Deviation from stoichiometry results in defects associated with zinc or oxygen electric conductivity and DLE intensity increasing in oxygen deficient ZnO nanostructures decreasing NBE to DLE ratio [21][22][23] [21][22][23].…”
Section: Results and Discussonmentioning
confidence: 99%
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“…Consequently, a built-in electric filed and the corresponding electrostatic potential will built up so that the energy bands bend upwards as they approach the surface and finally results in a surface depletion layer, which will strongly influence the PL properties of ZnO nanostructures. [40][41][42][43][44][45] Since ZnO nanostructures usually have a very large surface-volume ratio, the band bending due to near surface on the PL process become more significant. The smaller a nanostructure is, the larger surface-volume ratio and stronger band bending effect it will have.…”
Section: Resultsmentioning
confidence: 99%
“…It could be related with a higher surface density of the contributing states, their surface activation by the hole accumulation at the surface depletion, or the promotion of slower recombination processes related with the charge separation occurring in the built-in electric field layer. 8,14,[20][21][22][23][24][25][26] In ambient conditions, the ZnO NWs surface is covered by ionized oxygen species and hydroxyl groups that trap conduction electrons, causing an upward bending of the ZnO energy bands at the surface. While highly doped ZnO screens the surface charge within a very thin surface layer, much thicker depletion regions characterize undoped semiconductors.…”
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confidence: 99%