Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile

Abstract

Doping profile of InP nanowires directly imaged by photoemission electron microscopy Appl. Phys. Lett. 99, 233113 (2011) Effect of (O, As) dual implantation on p-type doping of ZnO films J. Appl. Phys. 110, 103708 (2011) Hafnium-doped GaN with n-type electrical resistivity in the 104cm range Appl. Phys. Lett. 99, 202113 (2011) Cu-doping of ZnO by nuclear transmutation Appl. Phys. Lett. 99, 202109 (2011) Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

Development of Inverted Organic Photovoltaics with Anion doped ZnO as an Electron Transporting Layer

“…Another peak in PL spectra shown in the region between 450 nm and 700 nm is giving information about surface defect such as oxygen vacancy and/or point defects of ZnO thin film [22,25,26,30,31]. It is already well known that surface oxygen vacancy of metal oxide film is quite important for the high electrical conductivity of the film.…”

“…Another optical characteristic like photoluminescence (PL) spectroscopy has been widely used to determine the optical band structure, and also PL spectra in the high wavelength represents the status of the surface structure kinds of surface defects of ZnO thin film [22,25,26,30,31]. In conventional PL spectra of ZnO thin film, one can detect two major peaks, one is strong emission peaks in the UV region of 380 nm 400 nm which is related to the property of optical band gap.…”

“…For improving the conductivity and mobility of ZnO thin film, n-type doping process with group III metallic cation elements such as Al [15,17,20,24], Ga [16,20], and In [17,20] is widely used and that substitute the zinc atoms in ZnO lattice [20,24]. Furthermore, it is also well known that group VII non-metallic anion elements doping such as F [18,29], Cl [19][20][21][22][23][24][25][26][27][28][29], Br [29], and I [29] can also improve the conductivity and mobility. These anion elements can substitute the oxygen atoms in ZnO lattice [20,24,28].…”

“…Among the various methods to reducing the recombination sites of ZnO ETL, anion doping can be one of the ideal concepts, because the atonic radius of group VII anion is almost similar to the oxygen atom as well as their excess electrons can help to achieving the high mobility [23,26] and conductivity [21,24,26] while maintaining high optical transparency [20,21,23,27], compared to group III cation metallic elements. Above all, anion element doping into ZnO ETL has been conducted by various deposition techniques such as electrochemical deposition [19,21,22,24,25], atomic layer deposition [26], radio frequencymagnetron sputtering [29], metalorganic chemical vapor deposition (MOCVD) [20,28], and pulsed laser deposition [23,27]. However, these previously used deposition techniques need complicated fabrication process, vacuum system, high price, and difficult to install.…”

Growth Time Effect on the Structural and Sub-Structural Properties of Chemically-Deposited ZnO Films

“…Another important advantage of ZnO is the possibility to grow nanostructured films controlled structural characteristics using non-vacuum, low-temperature and thus low-cost methods such as hydrothermal synthesis [5,6], electrodeposition [7,8,9,10,11], sol-gel method [12], spray pyrolysis [13] and chemical bath deposition (CBD) [14,15,16,17]. The latter technique is one of the most promising due to its simplicity, efficiency and the possibility to produce ZnO films on different types of substrates including flexible, large area substrates.…”