Surface Doping of Organic Single‐Crystal Semiconductors to Produce Strain‐Sensitive Conductive Nanosheets

Abstract

A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly. The formation of an assembly of redox‐active molecular dopants via a simple one‐shot solution process on a molecularly flat crystalline surface allows efficient chemical doping and results in a relatively high carrier density of 1013 cm−2 at room temperature. Structural and magnetotransport analyses comprehensively reveal that excellent carrier transport and piezoresistive effects can be obtained that are similar to those in bulk crystals.

High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors

“…5c-f, both the p-and n-channel TFTs exhibited decent transfer characteristics under the action of a bending stress. The slight V on shift is probably due to system error during measurement 38,47 . The bending stress applied on semiconductors depends not only on the bending radii but also device structure and substrate thickness.…”

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

“…The passivation technique is being studied to further stabilise these devices. The slight Von shift is probably due to system error during measurement 36,44 .The bending stress applied on semiconductors depends not only on the bending radii but also device structure and substrate thickness. The corresponding surface strain () can be calculated using the following equation 45…”

Interfacial doping of semiconducting polymers with phenothiazine-based polymeric ionic liquids

“…5,11 This method allows for control over the degree of doping by controlling the concentration of the dopant solutions. 6,17,18…”