Surface-directed spinodal decomposition in hafnium silicate thin films

Liu, J.; Wu, Xiaohua; Lennard, W.N.; Landheer, D.

doi:10.1103/physrevb.80.041403

Cited by 34 publications

(37 citation statements)

References 20 publications

(24 reference statements)

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“…As evoked previously, the formation of Si-or Ge-NCs (or ncs) requires an annealing treatment at 900-1100 C. 10,18,25 If these NCs (or ncs) have to be grown in the Hf-silicate matrix, the thermal behaviour of this latter element has to be taking into account. 5,14,15,20 In this paper, we present a specific approach developed to fabricate Hf-silicate dielectrics with embedded Si-ncs. The films were grown by reactive RF magnetron sputtering, yielding on a fine control of their chemical composition.…”

Section: Introductionmentioning

confidence: 99%

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Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Talbot

Roussel

Genevois

et al. 2012

Journal of Applied Physics

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Articles you may be interested inThe effect of nanocrystallite size in monoclinic HfO 2 films on lattice expansion and near-edge optical absorption Appl. Phys. Lett. 96, 191904 (2010) Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO 2 and HfO 2 phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.9 6 0.4) Â 10 17 Si-ncs/cm 3 , respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-j dielectrics with embedded Si nanoclusters. V C 2012 American Institute of Physics. [http://dx

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Section: Introductionmentioning

confidence: 99%

“…To explain this fact, one can refer to a Hf-Si-O phase diagram. [13][14][15][16][17] This pseudo-binary alloy can be accounted for a mixture of HfO 2 and SiO 2 unit cells such as (HfO 2 ) x (SiO 2 ) 1Àx . 13 They present a miscibility gap in the range of composition considered.…”

Section: Introductionmentioning

confidence: 99%

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Talbot

Roussel

Genevois

et al. 2012

Journal of Applied Physics

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“…Some authors have argued that it can proceed by nucleation and growth, or by spinodal decomposition mechanisms dependent on composition and temperature ranges, resulting in different microstructures. 41,42 There have been no reports of phase separation in the temperature, composition and thickness ranges explored in Figure 2: (773K)/ (Hf 0.67 Si 0.33 O 2 )/ (27Å). While the exchange process is fast for Hf oxide in the first few minutes, it slows down (or stops at a significantly long annealing time (~ 120min)).…”

Section: A Exchange Reactionsmentioning

confidence: 99%

Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001)

et al. 2011

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Medium energy ion scattering (MEIS) has been used in combination with 16 O and 18 O isotope tracing to determine elemental depth distributions and elucidate oxygen transport in 2-5 nm thick HfO 2 and HfSiO x films grown by atomic layer deposition on Si(001). Both the oxygen isotope exchange rate in the dielectric as well as the interfacial silicon oxide growth rates were examined as a function of time, temperature, film stoichiometry (HfO 2 , HfSiO x and HfSiO x N y ) and crystallinity. The amount of exchanged oxygen in the oxide was found to decrease with increasing SiO 2 content. When the SiO 2 to HfO 2 ratio reaches 1:1 in HfSiO x almost full suppression of oxygen exchange is observed. The activation barrier for the SiO 2 growth at the HfO 2 /Si and HfSiO x /Si interface was found to be much lower than that in the SiO 2 /Si and SiO x N y /Si cases, which is attributed to distinctly different oxygen incorporation mechanisms.Primary route for oxygen delivery to the interface responsible for the SiO 2 growth is via exchange, however direct oxidation by molecular oxygen cannot be discounted completely. In the presence of an interfacial nitride layer the 18 O-16 O exchange is replaced by the 18 O-N exchange, which slows diffusion and reduces the oxidation rate.2

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“…One example is a (HfO 2 ) 0.25 (SiO 2 ) 0.75 thin film produced by atomic layer deposition. 11 Because (HfO 2 ) 0.25 (SiO 2 ) 0.75 forms a solid solution, the spontaneous superlattice formation mechanism is regarded as spinodal decomposition. Another example is the (YBa 2 -Cu 3 O 7-x ) 0.5 (BaZrO 3 ) 0.5 thin film produced by PLD.…”

Section: Introductionmentioning

confidence: 99%

Magnetic-field-induced spontaneous superlattice formation via spinodal decomposition in epitaxial strontium titanate thin films

et al. 2016

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Periodically structured nanomaterials such as superlattices have a wide range of applications. Many electronic devices have been fabricated from these materials. The formation of spontaneous layer structures using epitaxial growth has also been reported for many compound semiconductors but for very few ceramics. We demonstrate that strontium titanate (Sr-Ti-O) thin films having an A-site excess composition in the perovskite structure deposited by pulsed laser deposition under a magnetic field show a spontaneously formed superlattice structure. The spontaneous superlattice formation mechanism has been proven to exhibit spinodal decomposition. Preparation of a part of the phase diagram for Sr-Ti-O thin films is reported for the first time. Although SrTiO 3 bulk is quantum paraelectric, previous reports have described that strained SrTiO 3 thin films show room-temperature ferroelectricity, especially along the in-plane direction. However, induced ferroelectricity along the out-of-plane direction has been reported in films with a limited thickness of less than 10 ml. The results show that the Sr-Ti-O thin films with spontaneously formed superlattice structures exhibit room-temperature ferroelectricity even when 300 nm thick. The induced ferroelectricity is brought about by the strain along the out-of-plane direction and is explained based on thermodynamic considerations.

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Surface-directed spinodal decomposition in hafnium silicate thin films

Cited by 34 publications

References 20 publications

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001)

Magnetic-field-induced spontaneous superlattice formation via spinodal decomposition in epitaxial strontium titanate thin films

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