Surface diffusion of silver at the silver (111)/liquid-water interface from electrocrystallization measurements

Ostwald‐Ripening‐Induced Growth of Parallel Face‐Exposed Ag Nanoplates on Micro‐Hemispheres for High SERS Activity

“…at polycrystalline electrodes is 3–4 orders of magnitude faster than at bulk‐terminated Ag(100) surfaces 12. Thus, the system is kinetically and thermodynamically biased toward the formation of larger single crystals 13…”

“…Detailed SEM observations ( Figure 3) on the interior of the resultant Ag micro-hemispheres reveal that the formation of the parallel face-exposed nanoplates on their surfaces is induced by Ostwald ripening, in which Ag diffuses from the interior (where the crystallites are smaller and less compact) of the micro-hemispheres to their surface with larger crystallites, and hence the original compact interior (Figure 3 at polycrystalline electrodes is 3-4 orders of magnitude faster than at bulk-terminated AgA C H T U N G T R E N N U N G (100) surfaces. [12] Thus, the system is kinetically and thermodynamically biased toward the formation of larger single crystals. [13] If the as-electrodeposited micro-hemispheres were rinsed with deionized water ( Figure S5 a and S5 b in the Supporting Information) and then immersed in deionized water for Ostwald ripening, unparallel nanoplates with a thickness of about 80 nm were achieved on the surfaces of the microhemispheres ( Figure S5 c and S5 d in the Supporting Information).…”

Solution of the Stefan Problem: Silver Electrodeposition under Mass Transfer Control. The Transition from Diffusion to Advection Regime

“…[21][22][23][24] For stepped polycrystalline silver in aqueous 1 M silver sulfate at 298 K, a value for j 0 of 24 ( 5 A/cm 2 has been reported. 21 The estimated value of j 0 for aqueous 2.4 × 10 -2 M silver sulfate at 298 K is 0.57 A/cm 2 .…”

Modeling of charge-mass transport in solid electrolyte-based electrochemical nanomanufacturing process

“…In the conditions of interest here, however, the surface diffusion rate k 2 and incorporation rate k 4 are usually orders of magnitude higher than the rest [14][15][16][17]. Therefore, the S4 etch rate is governed by k 1 , k 3 , and k 5 , which are the adatom formation, silver oxidation, as well as ionic transport rates respectively.…”

“…In the case of potentiostatic conditions and considering the k 2 , k 4 » k 1 , k 3 , k 5 (activation energy for adatom diffusion ∼0.1 eV, rate of silver incorporation into silver sulfide ∼10 16 atoms/cm 2 s) [14][15][16][17], the total reaction current can be simplified to…”