Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films

Baniecki, J. D.; Ishii, Masatoshi; Shioga, Takeshi; Kurihara, Kazuaki; Miyahara, Shoichi

doi:10.1063/1.2357880

Cited by 68 publications

(73 citation statements)

References 16 publications

(10 reference statements)

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“…[24][25][26][27][28] The -phase is associated to Ba atoms in BST perovskite 24 while the -phase is coupled with Ba atom in BST nonperovskite environment, such as carbonates, 27 oxides, 28 and relaxed BST phases due to oxygen vacancy and residual defects. 24,26 Moreover, in Ref. 25 after performing XPS analysis at variable emission angles, the -phase was found to be Ti-poor, Ba and Sr rich nonperovskite structure dominant on the surface of the film than the bulk.…”

Section: Methodsmentioning

confidence: 99%

Dielectric properties of BaMg1∕3Nb2∕3O₃ doped Ba_0.45Sr_0.55Tio₃ thin films for tunable microwave applications

Alema

Pokhodnya

2015

J. Adv. Dielect.

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Ba(Mg 1=3 Nb 2=3 ÞO 3 (BMN) doped and undoped Ba 0:45 Sr 0:55 TiO 3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO 2 /SiO 2 /Al 2 O 3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss ($38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg 2þ whose detrimental effect on tunability is partially compensated by small Nb 5þ as the two substitute Ti 4þ in the BST. The coupling between Mg Ti charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled Nb Ti sitting as a positive trap center at the shallow donor level of the BST.

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Section: Methodsmentioning

confidence: 99%

Dielectric properties of BaMg1∕3Nb2∕3O₃ doped Ba_0.45Sr_0.55Tio₃ thin films for tunable microwave applications

Alema

Pokhodnya

2015

J. Adv. Dielect.

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“…Table 1 summarizes data from the literatures on the XPS O 1s peak positions of BaTiO 3 (BTO) single crystals 27,28) and thin films. 22,[29][30][31] The single crystal BTO and epitaxial BTO thin films exhibited higher binding energies than those of polycrystalline thin films. This trend suggests that the XPS O 1s peak position increased to a value of a single crystal as crystallinity increased.…”

Section: Resultsmentioning

confidence: 99%

Microstructure and Electrical Conductivity of BaRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

2007

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BaRuO 3 (BRO) thin films were prepared by laser ablation at substrate temperature (T sub ) ranging from room temperature to 973 K in a high vacuum (10 À6 Pa) and in O 2 at oxygen pressures (P O2 ) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at P O2 ¼ 13 Pa and T sub > 773 K. BaRu 6 O 12 was co-deposited with BRO at P ¼ 10 À6 Pa and T sub > 573 K. The electrical conductivity () of the BRO thin films positively correlated with T sub and P O2 . Highly conductive ( > 10 4 SÁm À1 ) BRO thin films showed metallic conduction whereas less conductive ( < 10 4 SÁm À1 ) BRO thin films showed semiconducting behavior. BRO thin film prepared at P O2 ¼ 13 Pa and T sub ¼ 773 K exhibited a maximum of 7:7 Â 10 4 SÁm À1 at room temperature.

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“…The shift is also similar to that observed on the clean surface of a thick Ba x Sr 1−x TiO 3 single-crystal film. 27 However, a HBE component is also observed on a clean, TiO 2 -terminated surface of BTO where there are no surface Ba atoms. 25 The exact interpretation of the HBE component remains therefore an open question because the atomic rearrangement to screen the surface charge could also modify the electronic environment of the near-surface as well as surface Ba atoms.…”

Section: A Xpsmentioning

confidence: 99%

X-ray photoelectron diffraction study of relaxation and rumpling of ferroelectric domains in BaTiO3(001)

et al. 2013

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The surface of a ferroelectric BaTiO 3 (001) single crystal was studied using synchrotron radiation induced x-ray photoelectron diffraction (XPD), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and low-energy electron diffraction (LEED). AFM, XPS, and LEED show that the surface is BaO terminated with a (1×1) reconstruction. The Ba 4d, Ti 2p, and O 1s XPD results were compared with multiple scattering simulations for out-of-(P + ,P − ) and in-plane (P in ) polarizations using a genetic algorithm to determine atomic rumpling and interlayer relaxation. Linear combinations of the XPD simulations of the surface structure of each polarization state allow determination of the domain ordering. The best agreement with experiment is found for 55% P + , 38% P − , and 7% P in . The rumpling is smaller at the surface than in the bulk, suggesting that both domain ordering and surface structural changes contribute to screening of the polarization.

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Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films

Abstract: A method for the experimental determination of surface photoemission core-level shifts for 3d transition metals J. Appl. Phys. 98, 014908 (2005); 10.1063/1.1948508 Surface and interface chemical composition of thin epitaxial SrTiO 3 and BaTiO 3 films: Photoemission investigation

Cited by 68 publications

References 16 publications

Dielectric properties of BaMg1∕3Nb2∕3O₃ doped Ba_0.45Sr_0.55Tio₃ thin films for tunable microwave applications

Dielectric properties of BaMg1∕3Nb2∕3O₃ doped Ba_0.45Sr_0.55Tio₃ thin films for tunable microwave applications

Microstructure and Electrical Conductivity of BaRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

X-ray photoelectron diffraction study of relaxation and rumpling of ferroelectric domains in BaTiO3(001)

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Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films

Abstract: A method for the experimental determination of surface photoemission core-level shifts for 3d transition metals J. Appl. Phys. 98, 014908 (2005); 10.1063/1.1948508 Surface and interface chemical composition of thin epitaxial SrTiO 3 and BaTiO 3 films: Photoemission investigation

Cited by 68 publications

References 16 publications

Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

Microstructure and Electrical Conductivity of BaRuO<SUB>3</SUB> Thin Films Prepared by Laser Ablation

X-ray photoelectron diffraction study of relaxation and rumpling of ferroelectric domains in BaTiO3(001)

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Dielectric properties of BaMg1∕3Nb2∕3O₃ doped Ba_0.45Sr_0.55Tio₃ thin films for tunable microwave applications

Dielectric properties of BaMg1∕3Nb2∕3O₃ doped Ba_0.45Sr_0.55Tio₃ thin films for tunable microwave applications