Surface composition of glasses: modifications induced by chemical and thermal treatments

Bertóti, I.; Mohai, M.; Révész, M.; Alexander, G.

doi:10.1016/0042-207x(87)90100-x

Cited by 6 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Obviously, during processing, compositional and structural changes may occur, many of which can be monitored experimentally, e.g. by x-ray photoelectron spectroscopy (XPS, or ESCA) [7][8][9][10][11]. The valence band region, in particular, is expected to be very sensitive to chemical alterations.…”

Section: Introductionmentioning

confidence: 99%

Valence electronic structure of selected polyorganosiloxanes; x-ray photoelectron spectroscopy and quantum chemical studies

Ferenczy¹,

Tóth²,

Bertóti³

et al. 1997

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The valence electronic structures of poly(dimethylsiloxane) (PDMeSO), poly(methylsilsesquioxane) (PMeSSO), and poly(phenylsilsesquioxane) (PPhSSO) were calculated by the ab initio Hartree-Fock LCAO crystal orbital method and were studied experimentally by x-ray photoelectron spectroscopy. The basic features of the experimental spectra could be reproduced by the calculations, and thus the peaks could be assigned to structural elements. The electrons of the methyl side-groups of these polymers are basically localized. The aromatic electrons of the phenyl side-groups interact with the σ -bonds of the silsesquioxane skeleton. This skeleton-sidegroup interaction is similar to what has been reported for polyorganosilanes, though in PPhSSO these states are delocalized to a lesser extent as their smaller k-dispersion shows. The methyl side-groups of PDMeSO and PMeSSO contribute to the spectra only in the inner valence regions (between 16 eV and 28 eV), while the contribution of the phenyl groups in PPhSSO is important also in the outer valence region. These observations may facilitate the interpretation of chemical changes occurring during the transformation of these polymers into ceramic-like materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Valence electronic structure of selected polyorganosiloxanes; x-ray photoelectron spectroscopy and quantum chemical studies

Ferenczy¹,

Tóth²,

Bertóti³

et al. 1997

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…The curve fitting for HMDS, however, indicates the presence of additional peaks located between these two prominent peaks. By assigning (CH 3 ) 3 -Si-O and SiO x C y moieties at 102.2 15 and 101.5, 14 respectively, surface bonding structures can be compared. This analysis is important to establish whether polymeric residue or the HMDS layer remains after acid treatment.…”

Section: Solventsmentioning

confidence: 99%

Removal of Resist Materials Using Acetic Acid

Chávez

Hess

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

Polymer film removal from silicon surfaces was investigated using acetic acid at low temperatures. The polymer materials studied included poly͑methyl methacrylate͒, poly͑4-hydroxystyrene͒, and commercial positive photoresist ͑Shipley 1813͒. All polymer films studied were removed by acetic acid at 35°C, apparently by dissolution and in some cases, lift-off from the polymer-silicon interface. If an adhesion-promoting layer such as hexamethyldisilazane was applied to the silicon surface prior to polymer application, a thin carbon-based residue remained on the silicon surface as detected by X-ray photoelectron spectroscopy. A proposed solubility removal mechanism was investigated by using propionic and trifluoroacetic acids, since these acids possess different solubility and reactivity properties than acetic acid. Acetic acid was the most efficient for polymer removal and was capable of removing B ϩ and P ϩ ion-implanted (10 12 atoms/cm 2 ) photoresist.

show abstract

XPS study of the state of oxygen on a chemically treated glass surface

Mohai

Bertóti

Révész

1990

Surface & Interface Analysis

View full text Add to dashboard Cite

The 0 1s line of an ordinary, untreated glass surface and of a glass surface in its dealkalized state were studied by XPS. One single 0 1s peak was detected on tbe dealkalii sample at a bmding energy (BE) of 532.5 eV while on the alkalicontaining sample, and also on the dealkplized sample after alkali solution treatment, a second peak at 531.1 eV BE also could be detected. Experimental data were backed by semiempirical quantum cbemical cakulations. The observed low BE component of the 0 1s line, according to the outlined experimental evidence, is connected with the presence of alkali ions. This clearly contradicts earlier publications, interpreting the 0 1s line as originating from oxygen atoms in bridging and non-bridging positions.

show abstract

Surface composition of glasses: modifications induced by chemical and thermal treatments

Cited by 6 publications

References 9 publications

Valence electronic structure of selected polyorganosiloxanes; x-ray photoelectron spectroscopy and quantum chemical studies

Valence electronic structure of selected polyorganosiloxanes; x-ray photoelectron spectroscopy and quantum chemical studies

Removal of Resist Materials Using Acetic Acid

XPS study of the state of oxygen on a chemically treated glass surface

Contact Info

Product

Resources

About