Polymer film removal from silicon surfaces was investigated using acetic acid at low temperatures. The polymer materials studied included poly͑methyl methacrylate͒, poly͑4-hydroxystyrene͒, and commercial positive photoresist ͑Shipley 1813͒. All polymer films studied were removed by acetic acid at 35°C, apparently by dissolution and in some cases, lift-off from the polymer-silicon interface. If an adhesion-promoting layer such as hexamethyldisilazane was applied to the silicon surface prior to polymer application, a thin carbon-based residue remained on the silicon surface as detected by X-ray photoelectron spectroscopy. A proposed solubility removal mechanism was investigated by using propionic and trifluoroacetic acids, since these acids possess different solubility and reactivity properties than acetic acid. Acetic acid was the most efficient for polymer removal and was capable of removing B ϩ and P ϩ ion-implanted (10 12 atoms/cm 2 ) photoresist.