2003
DOI: 10.1149/1.1557085
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Removal of Resist Materials Using Acetic Acid

Abstract: Polymer film removal from silicon surfaces was investigated using acetic acid at low temperatures. The polymer materials studied included poly͑methyl methacrylate͒, poly͑4-hydroxystyrene͒, and commercial positive photoresist ͑Shipley 1813͒. All polymer films studied were removed by acetic acid at 35°C, apparently by dissolution and in some cases, lift-off from the polymer-silicon interface. If an adhesion-promoting layer such as hexamethyldisilazane was applied to the silicon surface prior to polymer applicati… Show more

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Cited by 12 publications
(12 citation statements)
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“…At the same time the low concentration of Cu dopant at the uppermost surface of the 62 nm ZnO film would reduce the n‐type character of the oxide thus increasing the barrier to electron injection into the conduction band, which would manifest as an apparent reduction in the conductivity normal to the plane of oxide film. To confirm that an increase in the conductivity of the ZnO overlayer is the reason for the reduction in the large electrode sheet resistance, the ZnO layer on five month old electrodes with a sheet resistance of 9 Ω sq −1 was selectively removed by etching with acetic acid (Figure S7, Supporting Information) . After this treatment the sheet resistance increases to ≈40 Ω sq −1 , which confirms that the doped ZnO overlayer is the reason for the reduction in sheet resistance.…”
Section: Resultsmentioning
confidence: 83%
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“…At the same time the low concentration of Cu dopant at the uppermost surface of the 62 nm ZnO film would reduce the n‐type character of the oxide thus increasing the barrier to electron injection into the conduction band, which would manifest as an apparent reduction in the conductivity normal to the plane of oxide film. To confirm that an increase in the conductivity of the ZnO overlayer is the reason for the reduction in the large electrode sheet resistance, the ZnO layer on five month old electrodes with a sheet resistance of 9 Ω sq −1 was selectively removed by etching with acetic acid (Figure S7, Supporting Information) . After this treatment the sheet resistance increases to ≈40 Ω sq −1 , which confirms that the doped ZnO overlayer is the reason for the reduction in sheet resistance.…”
Section: Resultsmentioning
confidence: 83%
“…Glacial acetic acid simultaneously dissolves residual PMMA and any oxide layer at the surface of the copper film that may have formed if the etching processing is performed in air. Glacial acetic acid is known to preferentially remove copper oxides from the surface of copper leaving the metal surface residue free . Notably, for PMMA layers that are ≤25 nm thick acetic acid treatment alone is sufficient to completely remove the PMMA layer.…”
Section: Resultsmentioning
confidence: 99%
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“…4 There are several methods reported to produce nanoimprinted features at temperatures as low as room temperature, including using polystyrene, 5 hydrogen silsesquioxane ͑HSQ͒, 6 and lift-off resists. [10][11][12] The nature of the resist at room temperature is compared with that at a normal high temperature process, and the process conditions that provide successful results are evaluated. 8 Solvent vapor treatments can also be used to enhance the viscous plasticity of polystyrene at low temperature.…”
Section: Introductionmentioning
confidence: 99%