Surface Chemistry Studies of Copper Chemical Mechanical Planarization

Hernández, J.; Wrschka, P.; Oehrlein, G. S.

doi:10.1149/1.1377595

Cited by 183 publications

(142 citation statements)

References 22 publications

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“…Slurry consists in its premixed form of 3.0 wt.% fumed colloidal silica particles with a median particle diameter of 250 nm, and a citric acid which is commonly used in metallic selective layer CMP slurries as a buffering or complexing agent [5,6]. H 2 O 2 was added to the premixed slurry to oxidize the selective layer (copper from the selective layer) and enhance its removal.…”

Section: Methodsmentioning

confidence: 99%

Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface

Ilie¹

2017

IJMSA

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Among other the planarization technologies, Chemical mechanical planarization (CMP) is the unique global planarization technology, which makes it be continuously investigated. The planarization (polishing) and micromachining are of considerable interest to different engineering fields, such as the friction couples that function with the selective transfer and is used to remove excess of metal, obtained in process of selective transfer and for the understanding of planarization and micromachining. For an effective planarization, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate (MRR). These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or by engineering the slurry chemistry, particles properties, and stability. Effect of the etching during CMP process of the selective layer surface are presented in this paper. To optimize the process of selective layer CMP a blanket selective layer samples were polished with, colloidal silica-based slurry which contains a citric acid and an oxidizer (H 2 O 2 ). Surface studies using X-ray photoelectron spectroscopy (XPS) were performed on selective layer samples after chemical etching in order to determine the effect that different polishing parameters (i.e., pH and H 2 O 2 concentration) have on the selective layer surface. Then, the samples were passively soaked in an acidic slurry mixture containing different concentrations of H 2 O 2 to determine how the chemical action alone affects the removal of the selective layer. The etching results revealed that a cuprous oxide (Cu 2 O) forms on the surface of the etched metallic selective layer while polished samples showed CuO and Cu(OH) 2 . The effect of these selective layer oxide films on the removal of the selective layer in passive etching and CMP is discussed.

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Section: Methodsmentioning

confidence: 99%

Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface

Ilie¹

2017

IJMSA

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“…Then, a chemical and mechanical polishing (CMP) step was performed to obtain a very flat surface 3 (rms roughness 0.4 nm as measured by AFM), resulting in ideal conditions for PEEM imaging. …”

Section: Samples Preparationmentioning

confidence: 99%

Work‐function imaging of oriented copper grains by photoemission

Renault

Brochier

Roule

et al. 2006

Surface & Interface Analysis

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We measured the work function of micrograins at the surface of a polycrystalline copper sample using NanoESCA, a photoelectron microscope equipped with two analysers in series. This allowed us to obtain accurate spectroscopic information with energy-filtered images showing lateral resolutions of 40 nm. Reconstructed microspectra directly show variations in the local work function of grains having different crystalline orientation.

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“…Thus, these compounds can only be used at intermediate pH values, around 4-7, in order to achieve high metal ligand binding efficiency. In a similar study, Oehrlein and coworkers [53] showed the effectiveness of phthalate compounds for the chelation of copper. In this study, it was proposed that the oxidation of Cu surface by the H 2 O 2 leads to the formation of Cu(OH) 2 .…”

Section: Organic Acidsmentioning

confidence: 91%

Key Chemical Components in Metal CMP Slurries

Cheemalapati

Keleher

2007

Microelectronic Applications of Chemical Mechanical Planarization

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Chemical-mechanical planarization (CMP) slurries can be classified into two general categories according to their applications: metal CMP slurry and nonmetal CMP slurry. Two most important metals incorporated into IC chip manufacturing via CMP are W and Cu. Depending upon integration schemes, a metal CMP slurry may or may not carry out the function of removing the film(s) immediately below the overburden metal such as cap, adhesion, and barrier layers. For tungsten CMP, a single-step slurry is typically used to remove both excess tungsten and its barrier/adhesion layer. For copper CMP, after the removal of copper, a subsequent barrier removal step is often required. This chapter reviews the basic requirements for the key components found in common metal slurries.It is generally understood that a metal CMP slurry chemically modifies the surface to be polished and yields a softer and porous complex layer, which is then removed by mechanical force in the process. Although these metals may differ in their physical and chemical properties, the underlying principle for the design of slurries is the same. A production-worthy metal CMP slurry must address several issues, such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), step height reduction efficiency, dishing/erosion, minimum ILD loss, corrosion, scratching, slurry residue, and other surface defects. Typical metal CMP slurry may contain an oxidant, a chelating agent, abrasive particles, a surfactant, and other additives. These components must work in concert to produce adequate material removal rate, high planarization efficiency, and Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Surface Chemistry Studies of Copper Chemical Mechanical Planarization

Cited by 183 publications

References 22 publications

Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface

Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface

Work‐function imaging of oriented copper grains by photoemission

Key Chemical Components in Metal CMP Slurries

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