Surface Chemistry of Prototypical Bulk II−VI and III−V Semiconductors and Implications for Chemical Sensing

Seker, Fazila; Meeker, Kathleen; Kuech, T. F.; Ellis, Arthur B.

doi:10.1021/cr980093r

Cited by 349 publications

(299 citation statements)

References 209 publications

Supporting

Mentioning

287

Contrasting

Unclassified

Order By: Relevance

“…For most metals (except the most noble ones, Au and Pt) and compound semiconductors, residual surface oxides are inevitable and fairly unstable, also because of the rich binding chemistry of surface oxides and hydroxides. [37,38] While that same chemistry can be put to good use in molecular electronics (e.g., silanes on SiOx, [39] phosphonates on Al 2 O 3 [40] and GaAs [36] ), below a minimal oxide width the reproducibility and stability of an oxidized surface is poor. An electronically ill-defined oxide also complicates junction modeling.…”

Section: Why Silicon? Semiconducting Versus Metallic Electrodesmentioning

confidence: 99%

See 1 more Smart Citation

Molecules on Si: Electronics with Chemistry

et al. 2009

View full text Add to dashboard Cite

Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

show abstract

Section: Why Silicon? Semiconducting Versus Metallic Electrodesmentioning

confidence: 99%

“…semiconductors [17,18,37] and are of interest also for adjusting interface energetics in organic electronics. [128][129][130] Alkyl monolayers appear not to change the dipole much beyond the effect of the SiÀC bond dipole, as noted above.…”

Section: Molecular Dipolementioning

confidence: 99%

Molecules on Si: Electronics with Chemistry

et al. 2009

View full text Add to dashboard Cite

show abstract

“…For nanoparticles prepared by solution-based chemical methods, a capping agent, which adsorbs on to the nanoparticle surface, is generally added both to control the size of the nanoparticles and to prevent agglomeration of the synthesized particles. These adsorbents have been shown to alter the electronic structure of the nanoparticles [10,11].…”

Section: Introductionmentioning

confidence: 99%

One-pot sonochemical synthesis of CdS nanoparticles: photocatalytic and electrical properties

et al. 2015

View full text Add to dashboard Cite

CdS nanoparticles (NPs) are synthesized by sonochemical method using tryptophan as a capping agent. The synthesis process is of one step, using biocompatible capping agent, which is nontoxic. The synthesized NPs are characterized by UV-Vis absorption, fluorescence, FTIR, XRD, TGA, DLS, SEM and TEM. The size of NPs is below 10 nm, as observed from XRD and TEM characterizations. Photocatalytic degradation of methyl orange (MO) dye by the CdS NPs as photocatalysts under sunlight irradiation has been studied. The kinetics of catalysis of synthesized CdS NPs with MO dye follows pseudo-firstorder kinetics with reasonable apparent rate constants. A variation of dielectric constant as a function of frequencies of an alternating electric field has been observed with the prepared tryptophan-capped CdS NPs deposited at different concentrations. The electric conductivity of CdS NPs is found to increases with the concentration of tryptophan.

show abstract

“…More recently, chemical and biological sensing has emerged as another potential application for III-V semiconductors. 6,7 Inherent differences between sensing and electronic devices notwithstanding, both could benefit from the enhancements provided by surface chemical passivation. For example, a standard treatment using ammonium sulfide solutions [(NH 4 ) 2 S x ] 2,3 produces S-passivated InAs surfaces with welldefined chemical and electronic properties, and short-term stability in air and aqueous solutions -a combination of properties which is required for sensing applications and which is also advantageous for microelectronics processing and fabrication.…”

Section: Introductionmentioning

confidence: 99%

Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Petrovykh

Sullivan

Whitman

2005

Surface & Interface Analysis

View full text Add to dashboard Cite

The initial quality and stability in air of InAs(001) surfaces passivated by a weakly-basic solution of thioacetamide (CH 3 CSNH 2 ) is examined by XPS. The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic 'layer-cake' structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick. This thickness range complicates the quantitative analysis because neither standard submonolayer nor thick-film models are applicable. Therefore, we develop a discrete-layer model and validate it with angle-resolved XPS data and electron attenuation length (EAL) calculations. We then apply this model to empirically quantify the arsenic oxide and sulfur coverage on the basis of the corresponding XPS intensity ratios.

show abstract

Surface Chemistry of Prototypical Bulk II−VI and III−V Semiconductors and Implications for Chemical Sensing

Cited by 349 publications

References 209 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

One-pot sonochemical synthesis of CdS nanoparticles: photocatalytic and electrical properties

Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Contact Info

Product

Resources

About